Floating body cell structures, devices including same, and methods for forming same

Abstract

Floating body cell structures including an array of floating body cells disposed on a back gate and source regions and drain regions of the floating body cells spaced apart from the back gate. The floating body cells may each include a volume of semiconductive material having a channel region extending between pillars, which may be separated by a void, such as a U-shaped trench. The floating body cells of the array may be electrically coupled to another gate, which may be disposed on sidewalls of the volume of semiconductive material or within the void therein. Methods of forming the floating body cell devices are also disclosed.

Description

[0001] Related Application Cross Reference [0002] This application is related to Serial No. 12 / XXX,XXX and entitled "Semiconductor-on-insulator metal structures, methods of forming such structures, and semiconductor devices incorporating such structures" (SEMICONDUCTOR-METAL-ON- INSULATOR STRUCTURES, METHODS OF FORMING SUCH STRUCTURES, AND SEMICONDUCTOR DEVICES INCLUDING SUCH STRUCTURES)” (Docket No. 2269-9742US); filed on the same date with serial numbers 12 / XXX,XXX and Titled "SEMICONDUCTOR DEVICES INCLUDING A DIODE STRUCTURE OVER A CONDUCTIVE STRAP, AND METHODS OF FORMING SUCH SEMICONDUCTOR DEVICES" (Docket No. 2269-9803US) co-pending U.S. patent application; filed on the same date as it, serial number 12 / XXX,XXX, and entitled "Thyristor-Based Memory Cells, Devices and Systems Including The Same, and Methods of Forming The Same (THYRISTOR- BASED MEMORY CELLS, DEVICES AND SYSTEMS INCLUDING THE SAME AND METHODS FOR FORMING THE SAME)" (Docket No. 2269-9804US); and serial num...

AI Technical Summary

Problems solved by technology

However, as the thickness of the SOI substrate decreases, the amount of charge accumulated in the floating body decreases and the cell can be more susceptible to noise during operation

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