Method for testing EEPROM (electrically erasable programmable read-only memory) read-write cycle times

Abstract

The invention relates to a method for testing electrically erasable programmable read-only memory (EEPROM) read-write cycle times. The method comprises the following steps of: compiling write operation graph vectors and read operation graph vectors of storage units in previous 2n (n is greater than or equal to 0 and less than or equal to 5) pages; running the write operation graph vectors, performing write operations on the storage units, and testing write cycle times; and running the read operation graph vectors, performing read operations on the storage units, and testing read cycle times. In the method, partial test graph vectors are used for reducing requirements for a test system, and a high address wire bit-by-bitantiphase method is used for switching all storage units, so that tests of the EEPROM read-write cycle times go deep into each unit, thus realizing the tests of all unit-by-unit read-write cycle times without large graph vector storage space, and being beneficial to performing a return-to-zero analysis for engineering quality. By adopting the method, the EEPROM read-write cycle times can be tested comprehensively, accurately, conveniently and flexibly.

Description

technical field [0001] The invention relates to a test method, in particular to a test method for EEPROM read and write cycle time. Background technique [0002] As a non-volatile memory, EEPROM is widely used in single-chip microcomputers and other occasions that require high data storage security and reliability, such as access control and attendance systems, measurement and medical instruments, contactless smart cards, tax control cash registers, Prepaid watt-hour meters or multi-rate watt-hour meters, home appliance remote controls, etc. However, EEPROM implements writing and erasing operations through electronic transitions. Since the time required for electronic transitions is relatively long, the writing and erasing time of EEPROM is relatively long. Generally, the writing and erasing time of a byte is 200μs~ 10ms, and the writing and erasing time of the whole device is usually more than 1000ms, so it is impossible to test the EEPROM by using the algorithmic graphic ...

AI Technical Summary

Problems solved by technology

However, EEPROM implements writing and erasing operations through electronic transitions. Since the time required for electronic transitions is relatively long, the writing and erasing time of EEPROM is relatively long. Generally, the writing and erasing time of a byte is 200μs~ 10ms, and the writing and erasing time of the whole device is usually more than 1000ms, so it is impossible to test the EEPROM by using the algorithmic graphic test method commonly used in random access memory, and can only refer to the read-only memory ROM for the read operation test of the empty chip and the DC Parameter test, but cannot test the read and write cycle time, and cannot detect typical faults such as too long writing time, which may easily cause misjudgment of the device

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