Nonvolatile memory device and manufacturing method thereof
A non-volatile, manufacturing method technology, applied in semiconductor/solid-state device manufacturing, transistors, electric solid-state devices, etc., can solve the problems of general products and methods without suitable structures and methods, inconvenience, etc.
Active Publication Date: 2015-06-10
MACRONIX INT CO LTD
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Problems solved by technology
[0004] It can be seen that the above-mentioned existing non-volatile memory device and its manufacturing method obviously still have inconvenience and defects in product structure, manufacturing method and use, and need to be further improved urgently.
In order to solve the above-mentioned problems, the relevant manufacturers have tried their best to find a solution, but no suitable design has been developed for a long time, and there is no suitable structure and method for general products and methods to solve the above-mentioned problems. This is obviously a problem that relevant industry players are eager to solve
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[0074] In order to further explain the technical means and effects of the present invention to achieve the intended purpose of the invention, the following describes the specific implementation of the non-volatile memory device and its manufacturing method according to the present invention, Structure, method, step, feature and effect thereof are as follows in detail.
[0075] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of preferred embodiments with reference to the drawings. Through the description of the specific implementation, it should be possible to obtain a deeper and more specific understanding of the technical means and effects of the present invention to achieve the intended purpose, but the attached drawings are only for reference and description, not for the purpose of the present invention. be restricted.
[0076] see figure 1 As shown, it is a flow...
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The invention relates to a nonvolatile memory device and a manufacturing method thereof. The manufacturing method of the nonvolatile memory device comprises the following steps of: forming a conducting layer, wherein the conducting layer is provided with a first top; and transforming the first top into a second top, wherein the second top is provided with an arched surface. The nonvolatile memory device comprises a transistor structure and a first conducting layer, wherein the first conducting layer is formed in the transistor structure and is provided with a top surface; and the top surface is provided with a limited minimum fitting curvature radius.
Description
technical field [0001] The invention relates to a memory device and a manufacturing method thereof, in particular to a non-volatile memory device and a manufacturing method thereof. Background technique [0002] In the prior art, a non-volatile memory device includes a substrate, a floating gate, a control gate and an insulator. The insulator is disposed between the substrate and the control gate, and the floating gate is buried in the insulator. The insulator includes a tunnel oxide layer and an interpolysilicon dielectric layer. The tunnel oxide layer is disposed between the substrate and the floating gate, and the interpolysilicon dielectric layer is disposed between the floating gate and the control gate. [0003] Floating gate memory cells with the above structure are produced using a fabrication process at a technology level of less than 20 nanometers. The floating gate memory cell suffers from high polysilicon dielectric leakage related to field crowding effects on...
Claims
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IPC IPC(8): H01L21/8247H01L27/115H01L29/423H01L29/788
Inventor 卢棨彬
Owner MACRONIX INT CO LTD