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Memory detection method and memory detection device

A memory detection and memory technology, applied in the information field, can solve problems such as affecting the reliability of memory and equipment, failing to discover storage units in time, and achieve the effect of improving reliability and accuracy

Active Publication Date: 2016-12-07
HUAWEI TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The embodiment of the present invention provides a memory detection method and a memory detection device, which are used to solve the problem that the failed storage unit cannot be found in time in the prior art, thereby affecting the reliability of the memory and equipment

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Embodiment Construction

[0022] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts fall within the protection scope of the present invention.

[0023] figure 1 The flow chart of the first embodiment of the memory detection method provided by the present invention, such as figure 1 As shown, the method includes:

[0024] S101. Perform an interval write operation on the basic unit in the physical memory unit;

[0025] S102. Perform a readback detection on the basic unit for which the wri...

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Abstract

A memory detecting method and a memory detecting device are provided. The method includes the following steps: an interval write operation is performed on a basic unit of a memory physical unit (S101); and then a read back detection is performed on the basic unit, on which the write operation has been performed, to confirm the basic unit whose write data differ from read back data (S102). The memory detecting method and the memory detecting device can promptly find the adjacent basic units, which have interactions caused by faults, through performing the interval write operation on the basic unit of the memory physical unit and then reading back from the basic unit after the write operation. Thereby the accuracy of the memory detecting is enhanced, and the reliability of the memory and the device is improved.

Description

technical field [0001] The invention relates to the field of information technology, in particular to a memory detection method and a memory detection device. Background technique [0002] With the continuous improvement of the integration of memory chips, the problem of mutual interference between memory cells inside the chip has become more and more prominent, and whether the memory is reliable plays a vital role in the reliability of the device. [0003] Existing memory detection methods, write and read back the memory in the order of increasing or decreasing logical addresses, however, in the process of writing and reading back when the logical addresses increase or decrease sequentially, the physical structure The adjacent cells may write the same data, but when the data of the adjacent cells in the physical structure is the same (that is, the charge is the same), they usually do not affect each other and cause data changes, so the failed cells cannot be detected, resul...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/22
CPCG11C29/08
Inventor 叶荣标张志龙
Owner HUAWEI TECH CO LTD