Device for quickly annealing semiconductor silicon chip

A rapid annealing and semiconductor technology, applied in crystal growth, post-processing details, post-processing, etc., can solve problems that affect the recovery of silicon single crystals to true resistivity, etc., and achieve strong industrial operability, easy operation, and simple structure Effect

Active Publication Date: 2015-03-18
ZHEJIANG COWIN ELECTRONICS
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  • Abstract
  • Description
  • Claims
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AI Technical Summary

Problems solved by technology

If the temperature range of 350~500℃ cannot be jumped quickly, thermal donors will be re-formed, affecting the recovery of silicon single crystals to the true resistivity

Method used

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  • Device for quickly annealing semiconductor silicon chip

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Embodiment Construction

[0022] Combine below figure 1 Specifically illustrate an embodiment of a device for rapid annealing of semiconductor silicon wafers of the present invention, comprising a support bracket 4 that receives the semiconductor silicon wafer 2 from the heat treatment furnace 1, a mobile slide 5 fixedly connected to the support bracket 4, and cooperating with the mobile slide 5 The sliding guide rail 6, the device also includes a contact switch 8 located on the sliding guide rail and the cooling fan 7 controlled by the contact switch. The contact switch controls the cooling fan to turn on.

[0023] The support bracket 4 is a plate with an arc-shaped cross section, and the support bracket has the same radian as the bottom half of the furnace mouth of the heat treatment furnace, and the height of the support bracket is consistent with the height of the furnace mouth of the heat treatment furnace. The semiconductor silicon chip falls on the supporting bracket together with the quartz bo...

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Abstract

The invention discloses a device for quickly annealing a semiconductor silicon chip, which comprises a support bracket, a movable sliding plate, a slide rail, a touch switch and a cooling fan, wherein the support bracket is used for receiving the semiconductor silicon chip from a heat treatment furnace; the movable sliding plate is fixedly connected with the support bracket; the slide rail is matched with the movable sliding plate; the touch switch is arranged on the slide rail; the switching of the cooling fan is controlled by the touch switch; and when the semiconductor silicon chip moves to the middle of the air flow of the cooling fan along with the movable sliding plate, the touch switch controls the cooling fan to start. The device disclosed by the invention can effectively implement quick annealing, can be used in the heat treatment annealing process in the actual semiconductor silicon chip processing and manufacturing process, and has the advantages of simple structure, simple operation and high efficiency.

Description

technical field [0001] The invention belongs to the field of semiconductor silicon wafer manufacturing and processing, and relates to a rapid annealing device suitable for the heat treatment process of semiconductor silicon wafers. Background technique [0002] Czochralski silicon single crystal is to place polysilicon in a high-purity quartz crucible and melt it at high temperature, because the high-purity crucible is in direct contact with molten silicon and is at a high temperature above 1450 degrees Celsius. At high temperature, SiO2 will react with molten silicon to grow SiO and partially dissolve in In molten silicon, as the crystal grows into the interior of the crystal, oxygen in silicon is formed. [0003] At the same time, the growth of direct silicon single crystal is slowly solidified and grown from a high-temperature melt, and the driving force of crystal growth mainly comes from the supercooling degree formed by the temperature gradient, so a period of thermal ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/02
Inventor 孙新利万喜增蒋伟达郑六奎
Owner ZHEJIANG COWIN ELECTRONICS
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