Method for preparing high-performance TFT

Abstract

The invention relates to the transistor manufacturing field, and discloses a method for preparing a high-performance TFT. In the method, a metal layer is formed on an activated layer, the activated layer is subjected to ion doping, and then a microwave annealing process is employed to activate doped ions. By utilization of high absorption effect of the metal layer to microwaves, the microwave annealing process efficiency is raised. The cost is low, and the method is helpful for batch production.

Description

Technical field [0001] The invention relates to the field of thin film transistor manufacturing, in particular to a method for preparing high-performance TFTs. Background technique [0002] Thin film transistors (TFTs) are widely used in display panels and other fields, and are named for transistors with electrical properties formed by depositing and patterning multilayer thin films on an insulating substrate. [0003] Early thin film transistors mainly used amorphous silicon as the activation layer. The rapid development of consumer electronics has higher requirements for TFT performance. In order to make the active layer have higher mobility, it is necessary to crystallize amorphous silicon. [0004] The crystallization of amorphous silicon is mainly achieved by heating up. Traditional thermal annealing (RTA) needs to be heated to 1000°C. Glass or organic substrates cannot withstand such high temperatures. Therefore, the main crystallization method used in the industry is laser ...

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Problems solved by technology

Usually, the industry mainly uses rapid thermal annealing or furnace tube annealing to activate impurities, which takes a long time (usually several hours)

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