10 results about "Microwave annealing" patented technology

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

A method of fabricating an integrated circuit (IC) is provided. The method includes the following steps: providing a substrate; forming a p-well region in the substrate; forming an n-well region in the substrate; conducting a microwave annealing at a first temperature; conducting, after the microwave annealing, a supplemental annealing at a second temperature higher than the first temperature; and fabricating a plurality of field-effect transistors (FETs) in the p-well region and the n-well region.

The application discloses a microwave annealing device, an annealing method and a semiconductor process equipment. The microwave annealing device comprises an annealing chamber, a plurality of bearing tables are arranged in the annealing chamber and are spaced apart along a first direction; the bearing table is used for bearing a component to be annealed; a multilayer microwave generating array is distributed in at least two layers along the first direction, and each layer of the microwave generating array comprises a plurality of microwave generating modules which are distributed along a circumferential direction of the annealing chamber; and a control module is electrically connected with each microwave generating module and is used for controlling the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path by adjusting the phases of the microwave output by each microwave generating module, so that the component to be annealed is scanned and heated. The application provides a microwave annealing device, an annealing method and a semiconductor process equipment, can simultaneously heat a plurality of components to be annealed, can also ensure the annealing uniformity of each component to be annealed, and improves the processing efficiency and the processing yield of the component to be annealed.

The embodiment of the present disclosure provides a microwave annealing device and a semiconductor workpiece bearing device, and relates to the technical field of semiconductor devices. The semiconductor workpiece bearing device comprises a rotating flange, a rotating driving member connected with the rotating flange and used for driving the rotating flange to rotate, a support column located above the rotating flange away from the rotating driving member and provided with a plurality of support portions used for supporting a semiconductor workpiece, a first power dissipation member installed on the upper part of the support column and located above the support portions, and a second power dissipation member installed on the lower part of the support column and located below the support portions, wherein the diameters of the first power dissipation member and the second power dissipation member are greater than the diameter of the semiconductor workpiece.

The present application relates to the technical field of electronic information functional ceramic materials and electronic devices, and particularly relates to a method for forming dielectric ceramic by microwave rapid annealing treatment, which comprises the following steps: (1) sample pretreatment, (2) microwave annealing, (3) cooling and discharging. The present application breaks through the limitation of heat damage caused by traditional process, and realizes the repair of non-intrinsic defects and intrinsic defects in the ceramic body by high-power microwave second-level transient annealing under the premise of completely maintaining the original grain size, crystal structure and phase composition of the ceramic, thereby fundamentally avoiding the problems of abnormal grain growth and volatilization of low-melting-point components, and realizing the lossless and rapid repair of defects of the formed dielectric ceramic. The processing period of traditional annealing lasting for several hours is shortened to 1-10 s, the process time is greatly shortened, and the quality factor Qxf of the dielectric ceramic after treatment is improved by 30%-100% in the terahertz band, and the quality factor Qxf is improved by 30%-60% in the microwave band.

A system includes a chamber body defining a processing volume. The system further includes a substrate support base positioned in the processing space and operable to support a substrate, the substrate support base including one or more channels, with a coolant medium flowing through the one or more channels to facilitate heat transfer from the substrate to the coolant medium. The system further includes a coolant medium circulator for circulating the coolant medium in the one or more channels. The system further includes a substrate temperature sensor operably coupled to the chamber body, wherein the substrate temperature sensor measures a temperature of the substrate. The system further includes a coolant medium circulation controller coupled to the coolant medium circulator and the substrate temperature sensor for controlling a rate of circulation of the coolant medium through the one or more channels.

The application belongs to the technical field of two-dimensional transition metal nanomaterial post-processing, and particularly discloses a Ti3C2T x The microwave annealing method for film strengthening and toughening comprises the following steps: Ti3AlC2 is treated by physical and chemical reaction to obtain a titanium carbide suspension, and then vacuum-assisted filtration drying is performed to obtain Ti3C2T x Film; the prepared Ti3C2T x Film sample is placed in a microwave reaction cavity; inert protective gas is introduced into the microwave reaction cavity, and the gas in the reaction cavity is discharged until the air in the cavity is completely discharged; the microwave loading power is adjusted to perform microwave annealing on the titanium carbide film, the total length of the loaded microwave power is controlled, and the power loading period and the power stopping period in each cycle are controlled to obtain Ti3C2T x Film with low defect density, compactness and high strength and toughness. The annealing device for microwave heating has the characteristics of rapid heating and high energy transmission, can greatly shorten the time required by the annealing process, improve the production efficiency, and can reduce the generation of temperature gradient and thermal stress.

Disclosed herein are methods for direct bonding. In some embodiments, the direct bonding method includes microwave annealing a dielectric bonding layer of a first element by exposing the dielectric bonding layer to microwave radiation and then directly bonding the dielectric bonding layer of the first element to a second element without an intervening adhesive. The bonding method also includes depositing the dielectric bonding layer on a semiconductor portion of the first element at a first temperature and microwave annealing the dielectric bonding layer at a second temperature lower than the first temperature.

This invention relates to an online microwave annealing method and apparatus for composite current collectors. The online microwave annealing method for composite current collectors includes pre-treating the composite current collector with a femtosecond laser to remove edge burrs; and continuously passing the pre-treated composite current collector through a microwave resonant cavity protected by an inert atmosphere at a preset linear velocity to complete the annealing process by utilizing the skin effect of microwaves on metals.

The present disclosure provides a microwave annealing apparatus including: a heating chamber defined by a housing provided with multiple microwave power sources electrically connected to microwave power supplies and configured to provide a microwave heating state for an integrated electronic component to be heated; a cooling temperature control module configured to provide a temperature state for the integrated electronic component to be cooled; a gas pipeline module configured to provide a gas state for the integrated electronic component to be treated; an operation interface module configured to set a plurality of process parameters for the microwave annealing apparatus; and a control module configured to control activation and deactivation of the microwave power supplies, the cooling temperature control module, and the gas pipeline module. The microwave annealing apparatus can provide rapid, stable, and uniform heating for multiple integrated electronic components.