19 results about "Microwave annealing" patented technology

The utility model relates to the technical field of solar cells, in particular to microwave annealing equipment, which comprises a microwave source, an annealing chamber and a magnetic field generator, the annealing chamber is internally provided with an annealing cavity for accommodating a substrate to be annealed, the microwave source is arranged on one side of the annealing chamber and communicated with the annealing cavity, the microwave source can radiate microwaves towards the annealing cavity, and the magnetic field generator is arranged on the outer side of the annealing chamber and faces the annealing chamber; the magnetic field generator is arranged to provide the magnetic field, the microwaves in the annealing chamber are limited, the microwaves are restrained in the annealing chamber, radiation dissipation is prevented, and therefore efficient annealing of the microwave annealing equipment is achieved, and the technical problem that in the prior art, radiation dissipated by the microwave annealing equipment is likely to cause harm to the human body and the environment is solved. And the safety of the microwave annealing equipment is improved.

The invention discloses a manufacturing process of a radial magnetic flux cylinder type motor iron core, and particularly relates to the technical field of motor iron core manufacturing, and the manufacturing process comprises the steps: employing magnetron sputtering to construct a gradient insulation coating on the surface of a nanocrystalline strip, and enabling the gradient insulation coating and silicon steel sheets to be alternately laminated to form a magnetic conduction-bearing composite structure; a yoke bionic honeycomb runner and a tooth magnetic barrier groove are machined through femtosecond laser, and magnetothermal coupling optimization is achieved; multidirectional progressive stamping forming is conducted in the pulsed magnetic field environment, and grain directional arrangement and interface metallurgical bonding are achieved in combination with femtosecond laser micro-connection; the integrated eddy current detection system regulates and controls press fitting parameters in real time, and stress regulation and control are completed through two-stage microwave annealing and ion beam treatment. According to the method, the magnetic circuit efficiency and the heat dissipation performance of the iron core are effectively improved, through material-structure-process collaborative innovation, the problems of magnetothermal imbalance, grain disorder, assembly accumulative errors and the like in traditional manufacturing are solved, and the operation stability and the service life reliability of the iron core under the high-frequency and high-load working condition are remarkably improved.

The invention relates to the technical field of solar cells, in particular to a preparation method of a single-wave precisely doped N-type BC cell. The invention discloses a preparation method of a single-wave precisely doped N-type BC battery. The preparation method comprises the following steps: S1, pre-treating an N-type silicon wafer; s2, performing boron doping on the front surface of the silicon wafer by adopting infrared single-wavelength laser to form a P + shallow junction; performing phosphorus doping on the back surface of the silicon wafer by adopting ultraviolet single-wavelength laser to form an N + region; s3, carrying out single-frequency microwave annealing treatment; s4, preparing a tunneling oxide layer, a boron-doped polycrystalline silicon passivation layer and a surface laminated passivation film; s5, carrying out laser grooving and copper electrode electroplating; s6, cutting the edge of the silicon wafer by adopting single-wavelength femtosecond laser; and S7, low-temperature annealing treatment. According to the method, the doping accuracy is improved, the service life of N-type silicon wafer carriers is ensured, the carrier recombination loss is remarkably reduced, the contact resistance and edge recombination loss is reduced, and the filling factor and the conversion efficiency of the cell are improved.

A method of fabricating an integrated circuit (IC) is provided. The method includes the following steps: providing a substrate; forming a p-well region in the substrate; forming an n-well region in the substrate; conducting a microwave annealing at a first temperature; conducting, after the microwave annealing, a supplemental annealing at a second temperature higher than the first temperature; and fabricating a plurality of field-effect transistors (FETs) in the p-well region and the n-well region.

The application discloses a microwave annealing device, an annealing method and a semiconductor process equipment. The microwave annealing device comprises an annealing chamber, a plurality of bearing tables are arranged in the annealing chamber and are spaced apart along a first direction; the bearing table is used for bearing a component to be annealed; a multilayer microwave generating array is distributed in at least two layers along the first direction, and each layer of the microwave generating array comprises a plurality of microwave generating modules which are distributed along a circumferential direction of the annealing chamber; and a control module is electrically connected with each microwave generating module and is used for controlling the microwave energy beams output by each microwave generating module in each layer of the microwave generating array to move along a preset path by adjusting the phases of the microwave output by each microwave generating module, so that the component to be annealed is scanned and heated. The application provides a microwave annealing device, an annealing method and a semiconductor process equipment, can simultaneously heat a plurality of components to be annealed, can also ensure the annealing uniformity of each component to be annealed, and improves the processing efficiency and the processing yield of the component to be annealed.

The embodiment of the present disclosure provides a microwave annealing device and a semiconductor workpiece bearing device, and relates to the technical field of semiconductor devices. The semiconductor workpiece bearing device comprises a rotating flange, a rotating driving member connected with the rotating flange and used for driving the rotating flange to rotate, a support column located above the rotating flange away from the rotating driving member and provided with a plurality of support portions used for supporting a semiconductor workpiece, a first power dissipation member installed on the upper part of the support column and located above the support portions, and a second power dissipation member installed on the lower part of the support column and located below the support portions, wherein the diameters of the first power dissipation member and the second power dissipation member are greater than the diameter of the semiconductor workpiece.

The present application relates to the technical field of electronic information functional ceramic materials and electronic devices, and particularly relates to a method for forming dielectric ceramic by microwave rapid annealing treatment, which comprises the following steps: (1) sample pretreatment, (2) microwave annealing, (3) cooling and discharging. The present application breaks through the limitation of heat damage caused by traditional process, and realizes the repair of non-intrinsic defects and intrinsic defects in the ceramic body by high-power microwave second-level transient annealing under the premise of completely maintaining the original grain size, crystal structure and phase composition of the ceramic, thereby fundamentally avoiding the problems of abnormal grain growth and volatilization of low-melting-point components, and realizing the lossless and rapid repair of defects of the formed dielectric ceramic. The processing period of traditional annealing lasting for several hours is shortened to 1-10 s, the process time is greatly shortened, and the quality factor Qxf of the dielectric ceramic after treatment is improved by 30%-100% in the terahertz band, and the quality factor Qxf is improved by 30%-60% in the microwave band.

A method of forming a vertical transistor comprising a top source / drain region, a bottom source / drain region, a channel region vertically between the top and bottom source / drain regions, and a gate operatively laterally-adjacent the channel region comprises, in multiple time-spaced microwave annealing steps, microwave annealing at least the channel region. The multiple time-spaced microwave annealing steps reduce average concentration of elemental-form H in the channel region from what it was before start of the multiple time-spaced microwave annealing steps. The reduced average concentration of elemental-form H is 0.005 to less than 1 atomic percent. Structure embodiments are disclosed.

The application relates to a solar cell, a preparation method thereof and a photovoltaic module. The preparation method of the solar cell comprises the following steps: providing a semiconductor substrate, wherein the semiconductor substrate comprises a first surface and a second surface arranged oppositely; forming a first tunnel layer and a first doped semiconductor layer in a stack on the first surface; the first doped semiconductor layer is located on the side of the first tunnel layer away from the semiconductor substrate; adopting a microwave annealing process to activate the doped elements in the first doped semiconductor layer, and forming a first inner extension layer in the semiconductor substrate and connected with the first tunnel layer; and forming a first electrode in ohmic contact with the first doped semiconductor layer on the side of the first doped semiconductor layer away from the semiconductor substrate. The application can make the junction depth of the first inner extension layer shallower, is beneficial to reducing the recombination of carriers, and improves the conversion efficiency and stability of the solar cell.

The invention relates to the technical field of surface treatment, in particular to a dust-free meltallizing surface treatment method which comprises the working procedures of base material pretreatment, coating material preparation, meltallizing spraying, cooling curing and post-treatment. A base material is cleaned and activated through a low-temperature plasma cleaning device, uniform distribution of a coating material is ensured by adopting an ultrasonic dispersion technology, and spraying is completed by utilizing a plasma-assisted meltallizing system under the protection of inert gas. And the gradient cooling technology is adopted for cooling and curing to reduce residual stress, and after-treatment is combined with microwave annealing and nanoscale polishing to optimize performance. The problems that an existing technology is complex, cost is high, energy consumption is large, and dust control is insufficient are solved, the coating quality and the environmental protection property are remarkably improved, and the method is suitable for efficient treatment of various workpieces in complex shapes.

A system includes a chamber body defining a processing volume. The system further includes a substrate support base positioned in the processing space and operable to support a substrate, the substrate support base including one or more channels, with a coolant medium flowing through the one or more channels to facilitate heat transfer from the substrate to the coolant medium. The system further includes a coolant medium circulator for circulating the coolant medium in the one or more channels. The system further includes a substrate temperature sensor operably coupled to the chamber body, wherein the substrate temperature sensor measures a temperature of the substrate. The system further includes a coolant medium circulation controller coupled to the coolant medium circulator and the substrate temperature sensor for controlling a rate of circulation of the coolant medium through the one or more channels.

The application belongs to the technical field of two-dimensional transition metal nanomaterial post-processing, and particularly discloses a Ti3C2T x The microwave annealing method for film strengthening and toughening comprises the following steps: Ti3AlC2 is treated by physical and chemical reaction to obtain a titanium carbide suspension, and then vacuum-assisted filtration drying is performed to obtain Ti3C2T x Film; the prepared Ti3C2T x Film sample is placed in a microwave reaction cavity; inert protective gas is introduced into the microwave reaction cavity, and the gas in the reaction cavity is discharged until the air in the cavity is completely discharged; the microwave loading power is adjusted to perform microwave annealing on the titanium carbide film, the total length of the loaded microwave power is controlled, and the power loading period and the power stopping period in each cycle are controlled to obtain Ti3C2T x Film with low defect density, compactness and high strength and toughness. The annealing device for microwave heating has the characteristics of rapid heating and high energy transmission, can greatly shorten the time required by the annealing process, improve the production efficiency, and can reduce the generation of temperature gradient and thermal stress.

The present invention relates to a microwave annealing apparatus capable of forming a dielectric material inside a waveguide and uniformly heating a semiconductor substrate by transmitting microwaves into a processing chamber through the dielectric material. The microwave annealing apparatus includes: the processing chamber having a predetermined inner space; a microwave generating unit which is installed outside the processing chamber and generates microwaves; and a waveguide which has one end connected to the microwave generating unit and the other end inserted into the processing chamber, has at least one slot formed on one surface of a portion thereof inserted into the processing chamber, and transfers the microwaves generated by the microwave generating unit, into the processing chamber through the dielectric material formed in at least one of the inner space and the slot to heat a substrate placed in the processing chamber.

The invention provides a metal element diffusion method of a semiconductor device and a manufacturing method thereof. The method comprises the following steps: forming a metal layer on the front surface of a semiconductor layer; enabling the metal layer to react with silicon to form a metal silicification layer; removing the unreacted residual metal layer, and reserving the metal silicification layer as a diffusion source; and heating the metal silicification layer by adopting microwave annealing or laser annealing, so that the metal elements in the diffusion source are diffused into the semiconductor layer. Through a low thermal budget process of a metal silicide solid-state source and microwave / laser annealing, precise and local diffusion of metal elements such as platinum, gold and molybdenum is realized on the front surface of the wafer on which the contact hole is formed, so that the service life of minority carriers in a drift region is controllably reduced, and subsequent ohmic contact preparation is compatible.

Disclosed herein are methods for direct bonding. In some embodiments, the direct bonding method includes microwave annealing a dielectric bonding layer of a first element by exposing the dielectric bonding layer to microwave radiation and then directly bonding the dielectric bonding layer of the first element to a second element without an intervening adhesive. The bonding method also includes depositing the dielectric bonding layer on a semiconductor portion of the first element at a first temperature and microwave annealing the dielectric bonding layer at a second temperature lower than the first temperature.

Embodiments of this application relate to a vertical transistor, an integrated circuit, and a method of forming the vertical transistor and the integrated circuit. A method of forming a vertical transistor includes a top source / drain region, a bottom source / drain region, a channel region vertically located between the top and bottom source / drain regions, and a gate operatively adjacent to the channel region. The method includes microwave annealing at least the channel region in a plurality of time-interval microwave annealing steps. The plurality of time-interval microwave annealing steps reduce the average concentration of elemental form H in the channel region from its state prior to the start of the plurality of time-interval microwave annealing steps. The reduced average concentration of elemental form H is from 0.005 to less than 1 atomic percentage. Structural embodiments of the invention are disclosed.

This invention relates to an online microwave annealing method and apparatus for composite current collectors. The online microwave annealing method for composite current collectors includes pre-treating the composite current collector with a femtosecond laser to remove edge burrs; and continuously passing the pre-treated composite current collector through a microwave resonant cavity protected by an inert atmosphere at a preset linear velocity to complete the annealing process by utilizing the skin effect of microwaves on metals.

The invention discloses a gradient-doped superlattice structure platinum-cobalt alloy / nitrogen-doped carbon nanotube composite positive electrode material and a preparation method thereof, and belongs to the field of hydrogen fuel cell catalytic materials. The catalyst is prepared by taking an AB2 type superlattice PtCoFeCr alloy as an active core (Co: Fe: Cr = 3: 1: 0.2), forming a periodic strain field through [111] crystal face orientation regulation and control, combining a nitrogen-doped carbon nanotube (N content is 8.5 at%) carrier and adopting a pulsed laser deposition-microwave annealing combined technology and a supercritical CO2 fluid loading process. The ORR mass activity reaches 6.2 A / mgPt at 0.9 V and is improved by 17 times compared with that of commercial Pt / C, and the activity is attenuated by lt after 30,000 times of circulation; the single-stack platinum dosage is 7.2 mg / kW, the large-scale cost is 380 yuan / g, the cost bottleneck of a hydrogen energy automobile catalyst can be broken through, and the method is suitable for the field of new energy automobiles.

The present disclosure provides a microwave annealing apparatus including: a heating chamber defined by a housing provided with multiple microwave power sources electrically connected to microwave power supplies and configured to provide a microwave heating state for an integrated electronic component to be heated; a cooling temperature control module configured to provide a temperature state for the integrated electronic component to be cooled; a gas pipeline module configured to provide a gas state for the integrated electronic component to be treated; an operation interface module configured to set a plurality of process parameters for the microwave annealing apparatus; and a control module configured to control activation and deactivation of the microwave power supplies, the cooling temperature control module, and the gas pipeline module. The microwave annealing apparatus can provide rapid, stable, and uniform heating for multiple integrated electronic components.