Method of preparing material-over-insulator through adsorption and peeling

Abstract

The invention provides a method of preparing a material-over-insulator through adsorption and peeling. The method comprises the following steps: providing a substrate, and sequentially forming a doped single crystalline layer, a superlattice structural layer and a to-be-transferred layer on the substrate through an epitaxial mode; conducting ion implantation to enable ions to be implanted into the bottom surface of the doped single crystalline layer below a preset depth; and providing a substrate with an insulating layer on the surface, making the substrate bond with the to-be-transferred layer to form a bonding pad, conducting microwave annealing so that doped layer adsorption ions form micro-cracks and are separated from the bottom surface, and finally obtaining a material-over-insulator. The material-over-insulator is prepared through adsorption, peeling and bonding of a doped layer. The doped layer is formed by laminating a doped single crystalline layer and a non-doped or low-doped superlattice structural layer. The superlattice structural layer enhances the ion adsorption capability of the doped single crystalline layer to enable adsorption and peeling of the doped single crystalline layer with low-doped concentration, and the low-doped concentration enables the probability of diffusion of doped ions into the to-be-transferred layer to be reduced. In this way, the quality of the to-be-transferred layer is guaranteed.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for preparing a material on an insulator by adsorption and stripping. Background technique [0002] In recent years, materials on insulators have been widely used in many fields such as low-voltage, low-power, high-temperature, and radiation-resistant devices because of their unique insulating buried layer structure, which can reduce the parasitic capacitance and leakage current of the substrate. Making devices with smaller size and higher performance has always been the goal and direction of the development of the semiconductor industry. With the entry of VLSI technology into the 22nm node and below, higher requirements are placed on the feature size of integrated circuits. Based on ultra-thin Materials-on-insulator devices enable further device miniaturization. [0003] Usually, the preparation of materials on insulators includes the following technologies: 1....

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a method for preparing materials on insulators by adsorption and stripping, which is used to solve the problem of high doping concentration of the doping layer in the prior art, and the easy diffusion of doping ions to the material to be transferred. The layer changes the properties of the layer to be transferred, and when the doped layer is a doped superlattice layer, the peeling surface is not smooth

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