Wafer bonding method and bonding device thereof

Abstract

The invention provides a wafer bonding method and a bonding device thereof. The wafer bonding method comprises the steps of: providing a gallium nitride wafer and a silicon carbide wafer; forming amorphous silicon carbide on the gallium nitride wafer and the silicon carbide wafer; and bonding the surfaces, on which the amorphous silicon carbide is formed, of the gallium nitride wafer and the silicon carbide wafer, and performing microwave annealing during the bonding process. According to the wafer bonding method, the amorphous silicon carbide on the gallium nitride wafer and the silicon carbide wafer is converted into crystalline silicon carbide through microwave annealing, thus the gallium nitride wafer and the silicon carbide wafer are bonded, the bonding efficiency is improved, and thereliability of gallium-nitride-based semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a wafer bonding method and a bonding device thereof. Background technique [0002] Gallium nitride (GaN)-based semiconductors have excellent material properties, such as large energy gap, high thermal and chemical stability, high electron saturation velocity, and the like. In addition, electronic devices using gallium nitride-based semiconductors have various advantages, such as high breakdown electric field, high maximum current density, stable operating characteristics at high temperature, and the like. Due to such material properties, gallium nitride-based semiconductors can be applied not only to optical devices but also to high-frequency and high-power electronic devices and high-power devices. [0003] Because it is difficult to obtain a good-quality gallium nitride single crystal substrate, sapphire, which has a small lattice mismatch and thermal mismatch with g...

AI Technical Summary

Problems solved by technology

However, due to the large gap between the thermal expansion coefficients of the wafers during bonding, there is a large stress between the two wafers after bonding, which reduces the bonding yield and leads to a decrease in the yield of GaN-based semiconductor devices.

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