Method of preparing GOI at low temperature by microwave annealing technology

Abstract

The invention provides a method of preparing GOI at low temperature by a microwave annealing technology. The method at least includes the following steps: providing a substrate and sequentially forming a doped layer and a first Ge layer on the substrate through an epitaxial mode; conducting ion implantation to enable ions to be implanted into the bottom surface of the doped layer below a preset depth; and providing a substrate with an insulating layer on the surface, making the substrate bond with the first Ge layer to form a bonding pad, conducting microwave annealing so that doped layer adsorption ions form micro-cracks and are separated from the bottom surface, and finally obtaining Germanium On Insulator. GOI is prepared through adsorption, peeling and bonding of the doped layer. Microwave annealing is performed on the bonding pad, and during the microwave annealing process, the local temperature of an interface between the doped layer and the substrate is high to cause peeling while the overall temperature of the bonding pad is low. Therefore, doped ions are not liable to be diffused in the first Ge layer, and the low temperature will not have an adverse influence on the first Ge layer and other layers. In this way, preparation of high-quality GOI is facilitated.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing, and relates to a method for preparing GOI at low temperature by utilizing microwave annealing technology. Background technique [0002] As the most widely used semiconductor material, silicon has many advantages. 1) The earth's reserves of silicon are large, so the cost of raw materials is low. 2) After 60 years of development, the purification process of silicon has reached the highest level of human beings. 3)Si / SiO 2 The interface of can be obtained by oxidation, which is perfect. An extremely perfect interface can be obtained by the post-annealing process. 4) The doping and diffusion process of silicon has been studied extensively, and there is a lot of previous experience. The disadvantage of silicon materials is that the electron and hole migration speed of silicon itself will hardly meet the needs of higher performance semiconductor devices in the future. Due to the low die...

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Problems solved by technology

[0009] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a method for preparing GOI at low temperature using microwave annealing technology, which is used to solve the problem in the prior art that high-temperature annealing is required to produce doped layer adsorption and peeling, and high-quality GOI cannot be prepared. The problem with GOIs

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