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Method of manufacturing 3D NAND through microwave annealing

A technology of microwave annealing and microwave cavity, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of unsatisfactory memory performance and achieve the effect of improving performance and crystallization quality

Active Publication Date: 2018-03-30
ZING SEMICON CORP
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Problems solved by technology

[0005] However, after testing the 3D NAND memory formed according to this method, it is found that the obtained memory is not ideal in terms of performance. Therefore, it is necessary to improve the existing technology

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  • Method of manufacturing 3D NAND through microwave annealing
  • Method of manufacturing 3D NAND through microwave annealing
  • Method of manufacturing 3D NAND through microwave annealing

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Embodiment Construction

[0026] The inventors conducted research on the above problems and found that the performance of 3D NAND devices depends on the quality of polysilicon crystallization, and the microwave method is used to anneal amorphous silicon to convert amorphous silicon into polysilicon, which can improve the crystallization quality of polysilicon. The performance of the 3D NAND device is thereby improved.

[0027] After further research, the inventor proposed a method for preparing 3D NAND by microwave annealing, which includes: forming a multi-layer stacked structure on a semiconductor substrate, the stacked structure sequentially includes a first material layer and a second material layer; Forming a through hole in the stacked structure to expose the semiconductor substrate; forming amorphous silicon on the sidewall of the through hole; performing microwave annealing on the amorphous silicon to convert the amorphous silicon into polysilicon. Thus, the crystallization quality of the polys...

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Abstract

The invention provides a method of manufacturing 3D NAND through microwave annealing. The method comprises the following steps of forming a multilayer stacked structure on a semiconductor substrate, wherein the stacked structure successively includes a first material layer and a second material layer; etching the stacked structure and forming a through hole so as to expose the semiconductor substrate; forming amorphous silicon on a side wall of the through hole; and carrying out microwave annealing on the amorphous silicon so that the amorphous silicon is converted into polycrystalline silicon. After the amorphous silicon is formed on the side wall of the through hole, the microwave annealing is performed on the amorphous silicon so that the amorphous silicon is converted into the polycrystalline silicon. Crystallization quality of the polycrystalline silicon is increased and performance of a semiconductor device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing 3D NAND by microwave annealing. Background technique [0002] With the development of semiconductor technology, various semiconductor storage devices, such as NOR flash memory and NAND flash memory, have been developed. Compared with conventional storage devices such as magnetic storage devices, semiconductor storage devices have the advantages of fast access speed and high storage density. Among them, the NAND structure is receiving more and more attention. To further increase storage density, three-dimensional (3D) NAND devices have emerged. [0003] 3D NAND memory is a new type of product based on planar NAND memory. The main feature of this product is to convert the planar result into a three-dimensional structure, which greatly saves the silicon chip area and reduces manufacturing costs. [0004] Such as figure 1 As shown, in the manufacturi...

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Application Information

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IPC IPC(8): H01L27/11556H01L21/02H10B41/27
CPCH01L21/02667H10B41/27
Inventor 三重野文健
Owner ZING SEMICON CORP
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