A kind of device and method for preparing polysilicon film

Abstract

The invention provides a device and method for preparing a polysilicon film. In the excimer laser annealing crystallization process, when the length of the laser beam is smaller than the width of the amorphous silicon film, the two ends of the laser beam are respectively provided with a shielding area and a transparent area. The first mask and the second mask composed of alternately arranged light areas, the shielding area and the light-transmitting area in the first mask are complementary to the light-transmitting area and the shielding area in the second mask, and two adjacent laser scans In the process, the first mask and the second mask are overlapped, so that only a single laser scan is performed in the overlapped area, thereby achieving the purpose of eliminating the overlapped scanning area and improving the uniformity of the crystallization quality of polysilicon thin films; the process is simple and easy to achieve large-scale applications . And the larger end of the light transmission area in the first mask and the second mask is arranged near the end of the laser beam; the area of ​​the light transmission area arranged at the two ends of the laser beam is larger, which can reduce the energy due to the laser beam two ends. The slope causes uneven crystallization quality.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a device for preparing a polysilicon film in a thin film transistor and a method for preparing the polysilicon film. Background technique [0002] Polycrystalline silicon thin film transistor (English full name is Polycrystalline Silicon Thin Film Transistor, referred to as p-Si TFT) has an important application in active matrix display technology. Especially for active organic light-emitting display devices (English full name is Organic Light-Emitting Display, referred to as OLED), because OLED is a current-mode device, only p-Si TFT with high mobility can fully meet the high current it needs . Although high-quality amorphous silicon thin film transistors (English full name is Amorphous Silicon Thin Film Transistor, a-SiTFT for short) can also drive OLEDs and have the advantages of high consistency and low manufacturing cost, but the threshold drift phenomenon is difficult be...

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Problems solved by technology

[0005] For this reason, what the present invention is to solve is that when excimer laser annealing crystallization is applied to large-scale substrates, the problem that the crystallization quality of the repeated scanning area is quite different from that of other areas is provided, and a polysilicon film with uniform crystallization quality can be prepared. Device and method for preparing said polysilicon thin film

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