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Device and method for preparing polycrystalline silicon thin film

A technology of polycrystalline silicon thin film and amorphous silicon thin film, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of large differences in crystallization quality, reduce uneven crystallization quality, improve uniformity, and eliminate Effect of Overlapping Scan Areas

Active Publication Date: 2015-04-29
KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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Problems solved by technology

[0005] For this reason, what the present invention is to solve is that when excimer laser annealing crystallization is applied to large-scale substrates, the problem that the crystallization quality of the repeated scanning area is quite different from that of other areas is provided, and a polysilicon film with uniform crystallization quality can be prepared. Device and method for preparing said polysilicon thin film

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  • Device and method for preparing polycrystalline silicon thin film
  • Device and method for preparing polycrystalline silicon thin film
  • Device and method for preparing polycrystalline silicon thin film

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Embodiment Construction

[0039] In order to make the purpose, technical solution and advantages of the present invention clearer, the following will further describe in detail the embodiments of the present invention in conjunction with the accompanying drawings.

[0040] This invention may be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete and will fully convey the concept of the invention to those skilled in the art, and the present invention will only be defined by the appended claims. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity.

[0041] This embodiment provides a kind of device and the method for preparing polysilicon film, such as image 3 As shown, the device for preparing a polysilicon thin film excites a pulsed laser beam 2 with a fixed position by an excimer laser at the laser outlet 9 ...

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Abstract

The invention provides a device and a method for preparing a polycrystalline silicon thin film. According to the device and the method, in an excimer laser annealing crystallization process, when the length of a laser beam is smaller than the width of an amorphous silicon, a first mask and a second mask which are formed by alternately arranging shielding areas and light-transmitting areas are arranged at the two ends of the laser beam respectively, and the shielding zones and the light-transmitting zones in the first mask are complementary with the light-transmitting zones and the shielding zones in the second mask, and first masks and second masks in the two adjacent laser scan processes are superposed, so that only single-time laser scan can be realized in superposed areas, a purpose of eliminating repeat scan on the superposed areas is realized, and the uniformity of the crystallization quality of the polycrystalline silicon thin film is improved. The process is simple, and large scale application can be realized easily; the ends, with larger light-transmitting areas, in the first mask and the second mask are arranged close to the end parts of the laser beam, so that the light-transmitting areas at the two ends of the laser beams are larger, and phenomena that the crystallization quality is non-uniform which is caused by energy gradient at the two ends of the laser beam can be reduced.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a device for preparing a polysilicon film in a thin film transistor and a method for preparing the polysilicon film. Background technique [0002] Polycrystalline silicon thin film transistor (English full name is Polycrystalline Silicon Thin Film Transistor, referred to as p-Si TFT) has an important application in active matrix display technology. Especially for active organic light-emitting display devices (English full name is Organic Light-Emitting Display, referred to as OLED), because OLED is a current-mode device, only p-Si TFT with high mobility can fully meet the high current it needs . Although high-quality amorphous silicon thin film transistors (English full name is Amorphous Silicon Thin Film Transistor, referred to as a-Si TFT) can also drive OLEDs and have the advantages of high consistency and low manufacturing cost, but the threshold drift phenomenon is very se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/67H01L21/268
Inventor 魏博
Owner KUNSHAN GO VISIONOX OPTO ELECTRONICS CO LTD
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