Method for preparing silicon quantum dot films through microwave annealing
A technology of microwave annealing and silicon quantum dots, which can be used in final product manufacturing, sustainable manufacturing/processing, photovoltaic power generation, etc. It can solve problems such as silicon quantum dots that have not yet been seen, and achieve lower crystallization temperature, faster separation, and lower costs. Effect
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Embodiment 1
[0024] Si / SiO x Preparation of multilayer films
[0025] Step 1. Substrate cleaning: A quartz plate with a thickness of 1mm is ultrasonically cleaned by deionized water, acetone, absolute ethanol and deionized water for 15 minutes;
[0026] Step 2. Sputtering coating: prepare SiO on the quartz substrate by magnetron co-sputtering x / Si multilayer film. Background vacuum 5×10 -5 Pa, the substrate temperature is 300°C, the argon gas flow rate is 40sccm, the working pressure is 0.3Pa, the pulse power of the Si target is 100W, and the SiO is connected 2 The RF power of the target is 40W. Such as figure 1 As shown, a layer of SiO with a thickness of 10 nm is grown on the substrate 101 2 buffer layer 102, and then alternately grow a 5nm-thick silicon-rich silicon oxide layer 103 and a 5nm-thick silicon layer 104 (a total of 20 cycles), and finally grow a layer of 10nm-thick SiO 2 Capping layer 105;
[0027] Microwave annealing crystallization process
[0028] Take out the s...
Embodiment 2
[0030] Similar to Example 1, the difference is that the annealing temperature is 800°C. The GIXRD test result of the silicon quantum dot obtained is as follows image 3 (b) shown.
Embodiment 3
[0032] Similar to Example 1, the difference is that the annealing temperature is 700°C. The GIXRD test result of the silicon quantum dot obtained is as follows image 3 (c) shown.
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