Chemical and mechanical grinding rate control method
A technology of grinding rate and control method, which is applied in the direction of grinding devices, grinding machine tools, manufacturing tools, etc., and can solve problems affecting the grinding rate, affecting the surface morphology of the grinding pad, and affecting the planarization efficiency, etc.
Inactive Publication Date: 2013-03-20
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology
But, on the one hand, the surface state of grinding pad 1 is kept under the effect of finishing parts 2 such as diamond dresser (diamond disk), that is to say depends on diamond dresser (type, the pressure when dressing the grinding pad) etc.) and the relative rotational speed with the grinding pad 1; when the grinding platform drives the rotational speed of the grinding pad 1 to change, the trimming effect will be different, thereby changing the surface condition of the grinding pad and further affecting the grinding rate; that is, different rotational speeds , will affect the surface state of the polishing pad, thereby affecting the surface morphology of the polishing pad
On the other hand, different pressures are used when grinding the wafer, which will affect the planarization efficiency
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[0016] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be described in detail below in conjunction with specific embodiments and accompanying drawings.
[0017] In fact, when doing chemical mechanical polishing, the grinding head 3 not only needs to rotate in the same direction as the rotation of the grinding platform (for example, counterclockwise rotation), but also needs to swing relative to the center of the grinding platform so that it can rotate relative to the center of the grinding platform. For relative motion, traditionally this kind of oscillating setting is to remove scratches and improve the uniformity of grinding.
[0018] However, the inventors of the present invention have advantageously found that "regulating the grinding rate" can be realized by adjusting the original "counterclockwise swing of the grinding head 3 for removing scratches and improving the uniformity of grinding", ...
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The invention relates to a chemical and mechanical grinding rate control method. When a grinding rate is regulated to a second grinding rate from a first grinding rate, the rotating speed of a grinding cushion and a pressure applied to a wafer are not changed, but the swing action of a grinding head is regulated to another movement state from a first movement state. When the grinding rate is regulated to the first grinding rate from the second grinding rate, the rotating speed of the grinding cushion and the pressure applied to the wafer are not changed either, but the swing action of the grinding head is regulated into the first movement state from the second movement state.
Description
technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a chemical mechanical polishing (CMP, chemical mechanical polishing, also known as chemical mechanical polishing) process, and more specifically to a method for controlling the rate of chemical mechanical polishing. Background technique [0002] Chemical mechanical polishing is currently widely used in the surface planarization process in the semiconductor manufacturing process. The process of chemical mechanical polishing is to place the wafer on a rotating polishing pad, add a certain pressure, and use chemical polishing liquid to polish the wafer to make the wafer flat. In the process of grinding silicon wafers by chemical mechanical grinding equipment, the abrasive (polishing fluid) flows on the grinding pad through the pipeline, and plays the role of lubrication and grinding medium in the grinding process, and the abrasive can also be mixed with the ground ...
Claims
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IPC IPC(8): B24B37/005
Inventor 李儒兴李志国程君陶仁峰胡海天
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP