nor flash memory, method for forming the same, and method for forming a contact hole

Abstract

The invention provides an NOR flash memory which comprises a drain electrode, a media layer covering the drain electrode and a contact hole formed in the media layer and connected with the drain electrode. The width of a contact face where the contact hole contacts with the drain electrode is 40nm to 150nm, and the minimum distance of the contact face and grid electrodes is 30nm to 100nm. The invention further provides a forming method for the flash memory and a contact hole forming method. Both the flash memory and the contact hole formed by utilizing the method can reduce leakage current in a transistor of the memory and improve performance of the memory.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a NOR flash memory, a forming method thereof, and a forming method of a contact hole. Background technique [0002] In semiconductor devices, leakage currents cause unnecessary power dissipation. Therefore, in the manufacturing process, efforts have been made to reduce the generation of leakage current and eliminate the influence of leakage current as much as possible. There are various factors for the generation of leakage current. Among them, in the NOR split-gate flash memory, during the high-voltage erasing operation, the source electrons are accelerated to the drain, and then injected into the floating gate from the drain. High voltage creates leakage current. [0003] In addition, due to the continuous shrinking of the critical dimensions of integrated circuits, the minimum distance between the contact hole on the drain and the gate is getting smaller and small...

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Problems solved by technology

[0003] In addition, due to the continuous shrinking of the critical dimensions of integrated circuits, the minimum distance between the contact hole on the drain and the gate is getting smaller and smaller, causing the dielectric layer between them to be more easily broken down under high voltage, resulting in leakage current

When the device size is relatively large, the leakage current caused by the above reasons is not obvious to NOR flash memory

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