Light-emitting diode chip with wavelength conversion layer and method of manufacturing the same, and package including the same and method of manufacturing the same
A technology of wavelength conversion layer and light-emitting diode, which is applied in the field of light-emitting diode chip with wavelength conversion layer and its manufacturing, package and its manufacturing, to achieve the effect of easy bonding wires and reducing heat dissipation paths
Active Publication Date: 2016-08-10
SEOUL SEMICONDUCTOR
View PDF7 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0006] However, since the wavelength conversion sheet is pasted on the upper surface of the LED, it is limited to the case of realizing white light in an LED having a structure in which light is mainly released toward the upper surface of the LED.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0094] Hereinafter, various embodiments of the present invention will be described in detail with reference to the drawings. The embodiments described below are provided as examples in order to fully convey the idea of the present invention to those skilled in the art. Therefore, the present invention is not limited to the Examples described below, and may be embodied in other forms. In addition, in the drawings, the width, length, thickness, etc. of the constituent elements may be exaggerated for convenience of description. Throughout the specification, the same reference numerals denote the same constituent elements.
[0095] figure 1 A cross-sectional view of the LED chip 101 provided for illustrating an embodiment of the present invention.
[0096] The light emitting diode chip 101 includes: a substrate 21; a GaN-based semiconductor stacked structure 30 including a first conductivity type semiconductor layer 25, an active layer 27, and a second conductivity type semic...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
Login to View More Abstract
PROBLEM TO BE SOLVED: To provide a light emitting diode (LED) chip capable of performing light conversion such as wavelength conversion at a chip level and a method of fabricating the same.SOLUTION: A light emitting diode (LED) chip having a wavelength conversion layer and a method of fabricating the same, and a package having the LED chip are disclosed. According to one embodiment, an LED chip comprises: a substrate; a GaN-based compound semiconductor stacked structure arranged on the top surface of the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer; an electrode electrically connected to the semiconductor stacked structure; an additional electrode formed on the electrode; and a wavelength converting layer covering an upper portion of the semiconductor stacked structure. Moreover, the additional electrode passes through the wavelength converting layer. This configuration makes it possible to provide an LED chip which can perform light conversion such as wavelength conversion and in which wire bonding can be easily performed.
Description
technical field [0001] The invention relates to a light-emitting diode chip and its manufacturing method, as well as its package and its manufacturing method, in particular to a light-emitting diode chip with a wavelength conversion layer and its manufacturing method, as well as its package and its manufacturing method. Background technique [0002] Since the current light-emitting diodes have the advantages of being able to realize thinness, lightness and miniaturization, save energy and maintain life for a long time, they are being used as backlight sources for various display devices including mobile phones, and due to the advantages of mounting light-emitting diodes A light-emitting element (ie, a light-emitting diode package) can realize white light with high color rendering, and thus is expected to be applied to general lighting in place of white light sources such as fluorescent lamps. [0003] In addition, there are various methods of realizing white light using ligh...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/50H01L33/36
CPCH01L2224/06102H01L2224/1403H01L2224/48091H01L2224/49107H01L2224/8592H01L2224/92247
Inventor 郑井和金枋显
Owner SEOUL SEMICONDUCTOR