High-voltage LED chip with light guide column and preparation method thereof
A technology of LED chip and light guide column, which is applied in the direction of semiconductor devices, electrical components, electric solid-state devices, etc., can solve the problems of difficulty and unfavorable mass production, etc., so as to improve the reliability of devices, improve the brightness of chips, and increase the light-emitting area Effect
Active Publication Date: 2016-01-06
SOUTH CHINA UNIV OF TECH
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Problems solved by technology
[0003] Existing technologies for improving side light extraction efficiency include hexagonal chips and parallelogram chips. By changing the size of the inner angle of the polygon, the light that is totally reflected on one side of the chip can be emitted on the other side to improve the light extraction efficiency. purpose, but this polygonal chip shape has certain difficulties in chip cutting, which is not conducive to mass production
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[0020] The present invention will be described in detail below with reference to the drawings and embodiments, but the implementation and protection scope of the present invention are not limited thereto.
[0021] Such as image 3 and Figure 5 , a high-voltage LED chip with a light guide column, including an epitaxial layer and a substrate, specifically including a sapphire layer 1, a GaN buffer layer 2, an N-type GaN3, a quantum well light-emitting layer 4, a P-type GaN5, and a single grain unit 6 of a high-voltage LED chip , light guide column 7 on the edge of a single grain unit, ITO transparent conductive layer 8, SiO 2 insulating layer 9 , P electrode 10 , connection electrode 11 , and N electrode 12 .
[0022] Such as image 3 , the present invention is characterized by forming a light guide column 7 with an inclined angle on the side of each crystal grain 6 of the high-voltage chip through an etching process, the etched surface includes the epitaxial layer side and ...
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The invention discloses a high voltage LED chip with a light guide pillar and a preparation method of the high voltage LED chip. The high voltage LED chip disclosed by the invention has the characteristics that a light guide pillar which has an inclination angle is formed on the side surface of each grain unit of the high voltage LED chip is formed. The light guide pillar is prepared by etching in the manufacture process of the high voltage LED chip directly, and an etched surface contains an epitaxial layer side and a substrate side. The light guide pillar disclosed by the invention can change an angle of incidence of a beam which is spread into air by a GaN-based light emitting diode material to avoid the total reflection, and prevents the loss resulted from the reason that the beam is repeatedly reflected inside a GaN-based light emitting diode, so as to improve the side extraction efficiency of the high-voltage LED chip simultaneously. Simultaneously, a trapezoid side angle can ensure that the short circuit is not generated when a connecting bridge is evaporated, a side wall emits light to increase a light-emitting area of each grain, and the loss caused by the fact that the light emitted from the grain side surface is reflected back and forth between the grains, the grain and the substrate and the insides of the grains can be reduced simultaneously.
Description
technical field [0001] The invention relates to the field of LED chips, in particular to the preparation technology of high-voltage LED chips. Background technique [0002] With the improvement of epitaxial growth technology and the development of multi-quantum well structure, the internal quantum efficiency of high-brightness LED has been greatly improved. At present, the light extraction efficiency of LED chips has become the main factor limiting the luminous efficiency of LEDs. The existing technical approaches to improve the light extraction efficiency of chips mainly include chip plastic technology, distributed Bragg (DBR) mirror technology, flip chip technology, surface roughening technology and photonic crystal technology. These technologies have improved the luminance of GaN-based light-emitting diodes to varying degrees, but they all focus on improving the light extraction efficiency of the front side of the chip. The nature of light-emitting diodes is spontaneous...
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IPC IPC(8): H01L33/20H01L27/15H01L33/00
Inventor 王洪叶菲菲黄华茂吴跃锋
Owner SOUTH CHINA UNIV OF TECH