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Semiconductor device measuring voltage applied to semiconductor switch element

A switching element and semiconductor technology, which is applied in the field of voltage semiconductor devices, can solve problems such as detection circuit damage, achieve circuit safety protection, and suppress current loss.

Inactive Publication Date: 2013-05-15
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The semiconductor device disclosed in Japanese Unexamined Patent Application Publication No. 2006-136086 only describes a method for detecting the conduction voltage in normal operation with high accuracy. There is no description of the measurement method and the countermeasure method for abnormal operation, and there is a possibility that the detection circuit will be damaged by abnormal operation.

Method used

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  • Semiconductor device measuring voltage applied to semiconductor switch element
  • Semiconductor device measuring voltage applied to semiconductor switch element
  • Semiconductor device measuring voltage applied to semiconductor switch element

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Embodiment approach 1

[0026] The semiconductor device according to the present invention can be used in general inverter devices. Figure 11 It is a circuit diagram showing the configuration of a general inverter device. Figure 11 The illustrated inverter device includes: a converter unit 150 connected to the AC power source 1 and converting the AC power into DC power; a smoothing capacitor 160 smoothing the DC power output from the converter 150; and an inverter unit 140 , the plurality of semiconductor switching devices are controlled to drive the motor 8 based on the DC power smoothed by the smoothing capacitor 160 .

[0027] In particular, the semiconductor device according to the present invention is applied to the inverter unit 140 , and in the following description, the configuration of one semiconductor switching element applied to the inverter unit 140 will be described for simplicity of description.

[0028] figure 1 It is a schematic diagram showing the configuration of the semiconduc...

Embodiment approach 2

[0051] Embodiment 2 relates to a semiconductor device in which a constant voltage element is changed from the semiconductor device according to Embodiment 1. Except for the content described below, the semiconductor device according to Embodiment 1 is the same, and the same reference numerals are assigned to the same or corresponding parts in the drawings, and the description thereof will not be repeated.

[0052] image 3 It is a diagram showing the configuration of a semiconductor device according to Embodiment 2 of the present invention.

[0053] refer to image 3 Compared with the semiconductor device 101 according to Embodiment 1 of the present invention, the semiconductor device 103 includes a voltage measurement circuit 33 instead of the voltage measurement circuit 31 . The voltage measurement circuit 33 includes a resistor 2 , a diode unit 5 , a control switch 7 , and a switch control unit 15 .

[0054] The diode unit 5 is connected in series to the resistor 2 and t...

Embodiment approach 3

[0060] The third embodiment relates to a semiconductor device in which a function of adjusting the voltage Vz1 across the Zener diode 3 is added to the semiconductor device 101 according to the first embodiment. Except for the content described below, it is the same as the semiconductor device 101 according to Embodiment 1, and the same reference numerals are assigned to the same or corresponding parts in the drawings, and the description thereof will not be repeated.

[0061] Figure 4 It is a diagram showing the configuration of a semiconductor device according to Embodiment 3 of the present invention.

[0062] refer to Figure 4 Compared with the semiconductor device 101 according to Embodiment 1 of the present invention, the semiconductor device 104 includes a voltage measurement circuit 34 instead of the voltage measurement circuit 31 . The voltage measurement circuit 34 includes a resistor 2 , a Zener diode 3 , a control switch 7 , a switch control unit 15 , and a resi...

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PUM

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Abstract

A semiconductor device 101 includes a semiconductor switch element 10 including a first conduction electrode and a second conduction electrode, and a voltage measurement circuit 31 for measuring voltage across the first conduction electrode and second conduction electrode of the semiconductor switch element. The voltage measurement circuit 31 includes a diode element 11 connected parallel to the semiconductor switch element 10 to restrict the voltage applied in the conducting direction of the semiconductor switch element 10 to a predetermined value, a control switch connected in series with the diode element 11, and a switch control unit 15 setting the control switch at an OFF state when the semiconductor switch element 10 is at an OFF state, and setting the control switch 7 at an ON state when the semiconductor switch element 10 is at an ON state.

Description

technical field [0001] The present invention relates to a semiconductor device, and more particularly, to a semiconductor device for measuring a voltage applied to a semiconductor switching element. Background technique [0002] In semiconductor switching devices such as inverters used for rotational speed control of electric motors and AC power supply devices, in order to detect that a semiconductor switching element is in an overcurrent state, for example, the conduction voltage when current flows through the semiconductor switching element is measured. [0003] Overcurrent protection of an IPM (Intelligent Power Module: Intelligent Power Module) built into a drive circuit such as an inverter is performed as follows, for example. That is, an IGBT (Insulated Gate Bipolar Transistor: Insulated Gate Bipolar Transistor) chip is provided with a current sensing unit, the current sensing unit is connected to a resistor, and the voltage across the resistor is monitored. Then, whe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26G01R19/00H03K17/08
CPCH02M1/00H03K2217/0027H03K17/0822G01R19/0084H03K17/08G01R31/26Y02B70/1483H03K17/082G01R19/00
Inventor 高良正行
Owner MITSUBISHI ELECTRIC CORP