Test structure and method for monitoring stability of lightly doped implantation under polysilicon sidewall

Abstract

The invention discloses a test structure for monitoring light dope injection stability under side walls of polycrystalline silicon. Active areas isolated by field oxygen are formed on a silicon substrate with a first conductive type, the active areas are provided with a second conductive type opposite to the first conductive type, the polycrystalline silicon grows above edges of two sides of the active areas and the field oxygen, side walls are formed on two sides of the polycrystalline silicon, at least two active areas are connected through rectangular active areas with same size, each rectangular active area is provided with through holes of the same number, through holes on each rectangular active area are lead out through a metal wire, and different test ports are respectively formed at two ends of each metal wire. The invention further discloses a test method by using a Calvin four-end resistance measurement method. The test structure for monitoring the light dope injection stability under side walls of the polycrystalline silicon and the test method can effectively reflect process stability through monitoring of light dope injection resistance values at a silicon wafer acceptance testing stage, can find and solve problems at the first time once fluctuation occurs, and avoid economic influence caused by silicon wafers which do not meet requirements.

Description

technical field [0001] The invention relates to a test structure and method, in particular to a structure and method for testing the stability of light doping implantation under polysilicon sidewalls. Background technique [0002] At present, the process monitoring structure for ion implantation in the active region is very mature, but for the monitoring of Lightly Doped Drain (LDD) implantation under the sidewall, there has been no effective structure because it cannot be independently tested. Indirectly through the monitoring of equipment parameters to side-evaluate process problems. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a test structure and method for monitoring the stability of lightly doped injection under the polysilicon sidewall, which can effectively monitor the process stability of the lightly doped injection under the sidewall during the silicon wafer acceptance test stage, Find and solve pro...

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Problems solved by technology

[0002] At present, the process monitoring structure for ion implantation in the active region is very mature, but for the monitoring of Lightly Doped Drain (LDD) implantation under the sidewall, there has been no effective structure because it cannot be independently tested. Indirectly evaluate process problems by monitoring equipment parameters

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