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Method and device for data management in flash storage device

A flash memory storage and data management technology, applied in the data storage field of memory, can solve the problem of low mass production efficiency of the application layer in smart devices, and achieve the effects of reducing mass production time, improving stability and strong practicability

Active Publication Date: 2015-09-16
SHENZHEN NETCOM ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the embodiment of the present invention is to provide a method for data management in a flash memory storage device, so as to solve the problem that the mass production efficiency of the application layer in the smart device is not high due to the application of the existing flash memory storage device containing MLC to the smart device

Method used

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  • Method and device for data management in flash storage device
  • Method and device for data management in flash storage device
  • Method and device for data management in flash storage device

Examples

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Embodiment 1

[0019] figure 1 The implementation flow of the data management method in the flash storage device provided by Embodiment 1 of the present invention is shown, and the process of the method is described in detail as follows:

[0020] In step S101, when writing data into the flash storage device for the first time, write the data into the least significant bit page and / or the single-level unit flash storage block in the flash storage device block of flash pages.

[0021] In this embodiment, when the flash storage device containing MLC is applied to smart devices such as smart phones, tablet computers, etc., the data written to the flash storage device for the first time is generally of relatively large and important data volume. Data, such as system installation data, etc. Since MLC contains non-least significant page bits, if the data is written into non-least significant page bits, it will seriously affect the read and write speed of data, resulting in low mass production eff...

Embodiment 2

[0037] figure 2 The composition structure of the data management apparatus in the flash memory storage device provided by the second embodiment of the present invention is shown, and for the convenience of description, only the parts related to the embodiment of the present invention are shown.

[0038] The data management device in the flash memory storage device can be applied to the flash memory storage device, and can be a software unit, a hardware unit, or a combination of software and hardware running in the flash memory storage device, or can be integrated into the flash memory storage device as an independent pendant Or run in the application system of the flash storage device.

[0039] The data management device in the flash storage device includes a data writing unit 21, wherein:

[0040] The data writing unit 21 is configured to write the data into the least significant bit page and / or A flash page of a single-level cell flash memory block.

[0041] Further, the...

Embodiment 3

[0050] image 3 The composition structure of the flash memory storage device provided by the third embodiment of the present invention is shown, and for the convenience of description, only the parts related to the embodiment of the present invention are shown.

[0051] Such as image 3 As shown, the flash storage device 3 includes the data management device 31 in the flash storage device described in the second embodiment, at least one multi-level cell flash memory 32 and / or single-level cell flash memory 33 .

[0052] In this embodiment, when writing data into the flash storage device 3 for the first time, the data management device 31 in the flash storage device writes the data into the lowest storage block of the multi-level unit flash memory 32 in the flash storage device. Valid bit pages and / or single level cell flash memory 33 memory pages of flash memory blocks.

[0053] The specific implementation process of the data management device 31 in the flash storage device ...

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Abstract

The present invention is applicable to the technical field of data storage of memories, and provided are a method and device for managing data in a flash memory device. The flash memory device comprises at least one multi-level cell flash memory. The method comprises: when writing data into the flash memory device for the first time, writing the data into a least significant bit page of a multi-level cell flash memory block of the flash memory device and / or a flash memory page of a single-level cell flash memory block. By means of the present invention, the speed of writing data for the first time can be greatly increased, and the time of writing data for the first time can be reduced, thereby reducing the mass-production time of an application layer of an intelligent device, and improving the mass-production efficiency thereof. Moreover, because the least significant bit page and the single-level cell flash memory page are stable and reliable, the stability of writing data can also be improved.

Description

technical field [0001] The invention belongs to the technical field of data storage of memory, and in particular relates to a method and device for data management in a flash memory storage device. Background technique [0002] Flash memory can be divided into single-level cell flash memory (Single-Level Cell, SLC) and multi-level cell flash memory (Multi-Level Cell, MLC) according to its internal structure. Each cell (cell) of SLC stores 1 bit (bit) of information; each cell (cell) of MLC stores at least 2 bits (bit) of information, where MLC includes 2bit / cell, 3bit / cell, 4bit / cell and more flash memory. [0003] The data writing of SLC is by applying a voltage to the charge of the floating gate, and eliminating the stored charge through the source, in this way, to store an information bit (1 means erasing, 0 means writing). MLC uses different degrees of charge in the floating gate, so it can store multiple bits of information in a single transistor, and through the cont...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F12/02
CPCG06F12/0246
Inventor 尹慧邓恩华李志雄
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
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