Unlock instant, AI-driven research and patent intelligence for your innovation.

Writing method and memory module of resistive memory

A resistive memory, resistive technology, used in static memory, read-only memory, information storage, etc., can solve problems such as insufficient durability, slow operation, and inability to correctly write memory blocks

Active Publication Date: 2016-11-30
WINBOND ELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, each memory block in flash memory can only be erased a certain number of times
When the erasing times of a storage block exceed a critical value, the storage block cannot be written correctly, and errors may occur when reading data from the storage block
[0004] In addition, flash memory still faces disadvantages such as excessive operating voltage, slow operating speed, and insufficient endurance.
In addition, it may also face shortcomings such as insufficient memory time caused by too thin through the gate oxide layer caused by device shrinkage

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Writing method and memory module of resistive memory
  • Writing method and memory module of resistive memory
  • Writing method and memory module of resistive memory

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The aforementioned and other technical contents, features and effects of the present invention will be clearly presented in the following detailed description of a preferred embodiment with reference to the drawings. The directional terms mentioned in the following embodiments, such as: up, down, left, right, front or back, etc., are only directions referring to the attached drawings. Accordingly, the directional terms are used to illustrate and not to limit the invention.

[0023] figure 1 It is a schematic diagram of an embodiment of a memory module according to the present invention. The memory module includes a memory controller 11 , a write circuit 12 , a verification circuit 13 and a resistive memory 14 . The writing circuit 12 further includes a voltage pulse generator 15 and a current pulse generator 16 . When the memory controller 11 receives write data, it transmits the write data and the data write address to the write circuit 12 . The write circuit 12 se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

An embodiment of the present invention provides a writing method of a resistive memory, including: receiving a first data, and selecting a first resistive memory cell for storing the first data; when the logic of the first data When the level is a first logic level, output a voltage pulse signal to the first resistive memory cell to write the first data; when the logic level of the first data is a second logic level and outputting a current pulse signal to the first resistive memory cell for writing the first data.

Description

technical field [0001] The invention relates to a control method of a flash memory, in particular to a control method of a resistive memory. Background technique [0002] Flash memory is a non-volatile memory that can be electrically erased and rewritten, and is mainly used in memory cards and USB flash drives, as a general storage and between computer devices and digital products Transfer of data. The cost of flash memory is much lower than that of EEPROM, so it has become a mainstream memory device. For example, flash memory is used in personal digital assistants (PDAs), portable computers, digital audio players, digital cameras, and mobile phones. [0003] However, each memory block in the flash memory can only be erased a certain number of times. When the erasing times of a memory block exceed a critical value, the memory block cannot be written correctly, and errors may occur when reading data from the memory block. [0004] In addition, flash memory still faces dis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/10G11C16/02
Inventor 焦佑钧詹东义林晨曦张文岳
Owner WINBOND ELECTRONICS CORP