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Wafer heater and electron mobility detection device

A technology for heaters and wafers, which is applied in semiconductor/solid-state device testing/measurement, circuits, electrical components, etc. It can solve problems such as wasting wafers, affecting device performance, and complicated processes, and achieve the effect of reducing energy consumption

Active Publication Date: 2015-12-16
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is to propose a new wafer heater to overcome the need to heat the entire heating layer in the existing detection method, which affects the performance of the device that does not need to be heated, and consumes a lot of energy. If the entire heating layer is not heated, Cutting off the area to be inspected will cause complex processes and waste wafers

Method used

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  • Wafer heater and electron mobility detection device
  • Wafer heater and electron mobility detection device
  • Wafer heater and electron mobility detection device

Examples

Experimental program
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Embodiment 1

[0032] figure 1 Shown is a schematic structural view of the wafer heater 1 provided by Embodiment 1 of the present invention. refer to figure 1 , the heater 1 includes:

[0033] The TSV 11 and the first metal layer 13 and the second metal layer 12 located at both ends of the TSV 11; wherein, the TSV 11 is filled with a conductive material; the first metal layer 13 is buried in the wafer, and the second metal layer 12 is exposed on the surface of the wafer 10.

[0034] In the first embodiment, the filled conductive material is polysilicon, and in other embodiments, it can also be metal; the materials of the first metal layer 13 and the second metal layer 12 are both copper, and in other embodiments, the two layers can also be Choose aluminum. The purpose of the two layers 12 and 13 is to connect the positive and negative electrodes of the power supply, and the conductive material in the TSV 11 generates current and generates heat.

[0035] In the first embodiment, the seco...

Embodiment 2

[0051] The difference between the second embodiment and the first embodiment is that a new wafer heater 1' formed by a plurality of wafer heaters, for example 5, is arranged around the device to be tested, such as a transistor. Such as Figure 11 As shown, the end-to-end connection of adjacent wafer heaters is connected through the first metal layer 13 of one wafer heater to the first metal layer 13 of another wafer heater, or the second metal layer 13 of one wafer heater. The metal layer 12 is connected to a second metal layer 12 of another wafer heater. When in use, the complete wafer heater 1' connected end-to-end is supplied with power to heat it. In order to be compatible with various heating requirements, the applied power is a high-voltage power supply, and the first metal layer 13 located at the head or tail is connected to the A resistor is connected in series between the high voltage power supply to reduce the current passing through the heater 1'.

[0052] In addi...

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Abstract

Provided is a wafer heater. The wafer heater comprises a through-silicon hole, and a first metal layer and a second metal layer located at the two ends of the through-silicon hole, wherein conduction materials are filled with the through-silicon hole. The first metal layer is embedded in a wafer, and the second metal layer is exposed on the surface of the wafer. In addition, the invention further provides an electronic mobility detector. By applying of the technical scheme, the problems that an existing detection method needs to heat a whole heating layer, affects performance of devices which are unnecessary to be heated, is large in energy consumption, and complex process, waste of the wafer and the like caused by cutting a region to be detected if the whole heating layer is not heated are solved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a wafer heater and an electron mobility detection device. Background technique [0002] In semiconductor technology, many devices perform differently at different temperatures. For example, gate structures are prone to breakdown at high temperatures. Therefore, in order to test the performance of a semiconductor device, it is necessary to perform a high temperature test on the device. In the prior art, the high temperature test generally sets a heating layer on the wafer, such as polysilicon, and tests the device by heating the entire heating layer. [0003] However, since this test needs to heat the entire heating layer, and the entire wafer is usually integrated with multiple devices, it is inevitable to heat the device that does not need to be tested, which will affect the performance of the device that does not need to be heated, and It consumes a lot of energy. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/544H01L21/66
Inventor 张莉菲
Owner SEMICON MFG INT (SHANGHAI) CORP