Gas distributor used in atomic layer deposition device
A gas distributor and atomic layer deposition technology, applied in coating, gaseous chemical plating, metal material coating process and other directions, can solve the problems of waste of precursor purging gas, increase the volume of the reactor, etc., and achieve a simple structure. , low cost, and the effect of improving the uniformity of the film
Active Publication Date: 2015-06-10
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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Problems solved by technology
In the patent CN 1228470C, a circular screen gas distributor composed of multiple holes is disclosed. The reaction gas is drawn from the edge of the substrate to the middle. This structure can well supply the precursor for the sample. However, the diameter of the gas distributor is required to be larger than the sample size, which will increase the volume of the reactor and cause waste of precursor and purge gas
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[0021] The technical solution of the present invention will be described in detail below in conjunction with the accompanying drawings and embodiments.
[0022] Such as figure 1 , figure 2 with image 3 As shown, this embodiment provides a gas distributor for atomic layer deposition equipment, the gas distributor is arranged in the reaction chamber 21 of the atomic layer deposition equipment, located directly above the substrate stage 23 in the reaction chamber 21, The height of the lowermost end of the gas distributor from the substrate table 23 is 40 mm. The substrate table 23 has a specification of 8 inches, and can deposit required thin film layers for samples smaller than or equal to 8 inches. The gas distributor is an annular gas pipeline 12, the gas pipeline 12 is a 1 / 4 standard air intake pipe, and the diameter of the central circle is 80mm. The gas inlet on the gas pipeline 12 is connected with the gas inlet pipeline 11 of the reaction chamber, and the gas outlet...
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Abstract
The invention relates to the technical field of an atomic layer deposition device, and specifically relates to a gas distributor used in an atomic layer deposition device. The gas distributor is arranged in a reaction chamber of the atomic layer deposition device, and is positioned above a substrate stage in the reaction chamber. The gas distributor is an annular or U-shaped gas path pipe. A gas inlet and a plurality of gas outlets are provided on the gas path pipe. The gas inlet communicates with a gas inlet pipe of the reaction chamber. The gas outlets are uniformly distributed on the inner and outer sides of the gas path pipe. A gas outlet direction of the gas outlet forms an inclination angle with a vertical direction. The gas distributor provided by the invention has the advantages of simple structure, easy processing, and low cost. With the gas distributor provided by the invention, on a basis that an ALD deposition manner is satisfied, a precursor can completely cover a sample surface, such that film uniformity can be greatly improved.
Description
technical field [0001] The invention relates to the technical field of atomic layer deposition equipment, in particular to a gas distributor for atomic layer deposition equipment. Background technique [0002] The biggest feature of the atomic layer deposition (ALD) method is that the surface reaction is self-limiting. The single-cycle thin film deposition process consists of the following steps: (1) The first reaction precursor is input to the surface of the substrate material and chemically adsorbed ( (saturated adsorption) is deposited on the surface; (2) the excess precursor is purged with inert gas; (3) when the second precursor is introduced into the reaction chamber, it will be adsorbed on the surface of the substrate material with the first A precursor reacts. A displacement reaction will occur between the two precursors and corresponding by-products will be generated until the reaction vacancies provided by the first precursor adsorbed on the surface are completel...
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IPC IPC(8): C23C16/455
Inventor 张艳清夏洋李超波万军吕树玲陈波石莎莉李楠
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI