CTS2 charge pump

Abstract

The invention discloses a CTS2 charge pump. An NMOS pipe of a last-stage conveying pipe of the CTS2 charge pump is replaced by a PMOS pipe. Switching of control voltage of the PMOS pipe between zero and output voltage is achieved through strength changes of clock signals. Conveying pipes at various stages, particularly the last-stage conveying pipe can be connected when needed and therefore influences of a threshold voltage bulk effect are completely eliminated.

Description

technical field [0001] The invention relates to the technical field of power supplies in the electronics industry, in particular to a second-generation charge transfer switch (Charge Transfer Switch 2, CTS2 for short) charge pump. Background technique [0002] For many non-volatile memories, their read and write operations require high voltages (maybe negative high voltages), so charge pumps are widely used in memories to provide high voltages or negative voltages higher than the external power supply voltage. At the same time, as the complexity of circuit design increases, various hybrid circuits emerge as the times require. Simply relying on the voltage provided by the external power supply is far from meeting the requirements. The characteristics of the charge pump determine that it can solve this problem, especially as the power supply voltage increases. Decline, the application of charge pump is more and more widely. [0003] figure 1 It is a structural schematic diag...

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Problems solved by technology

[0021] However, in the existing CTS2 charge pump, since the last-stage amplifying unit is still the same as the Dickson structure, it is still in the form of a diode, so the influence of threshold voltage and body effect has not been completely eliminated.

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