5 results about "Charge transfer switch" patented technology

Multi-stage charge pumps use a modular structure in which each stage include a pair of legs, or current paths, between the stage input and the stage output. Each leg includes a stage boosting capacitor having a first plate connected to the current path and a second plate connected to receive one of a pair of non-overlapping clock signals. Each leg has an NMOS charge transfer switch connected between the stage input and the first plate of the stage boosting capacitor and a PMOS charge transfer switch connected between the first plate of the stage boosting capacitor and the stage output. To reduce charge pump area, the NMOS and PMOS charge transfer switches are formed to have a same resistance value when in an on state, where to achieve this the NMOS charge transfer switches are formed with wider control gates than the PMOS charge transfer switches.

The application provides a capacitive touch detection circuit, method and device, wherein the capacitive touch detection circuit comprises a touch electrode, a charge transfer circuit, a voltage detection circuit and a control circuit, the voltage detection circuit is provided with multiple reference voltages, the control circuit controls the charge transfer switch to repeatedly perform charging, charge transfer and charge clearing within a preset number of clock cycles, and the state of a level signal output by the voltage detection circuit is acquired; when m first level signals are acquired within multiple continuous preset numbers of clock cycles, it is determined that a touch operation occurs; otherwise, it is determined that no touch operation occurs; through the mechanism of 'continuous multiple N period confirmation', false triggering caused by instantaneous interference pulses, power supply noise, ESD interference and the like can be effectively filtered out, and through flexible configuration of the value of m, the sensitivity and anti-interference performance can be adjusted.

The application belongs to the technical field of photoelectric detection, and particularly relates to a high-dynamic-range photoelectric detector and a photoelectric image sensor. Mainly comprising: a photodiode (PPD), a diffusion node (FD), a reset switch (RST) and a charge transfer switch (TX). A control device controls these switches to generate initial linear mode (LIN) and logarithmic mode (LOG) response signals of the photoelectric detection element. The control device performs two consecutive exposures on the photodiode with two different working parameters, and a calculation device receiving corresponding signals generates a unified logarithmic response signal by considering the slopes (K1; K2) of the responses and the offsets (OS1; OS2) between the signals.

Multi-stage charge pumps use a modular structure in which each stage include a pair of legs, or current paths, between the stage input and the stage output. Each leg includes a stage boosting capacitor having a first plate connected to the current path and a second plate connected to receive one of a pair of non-overlapping clock signals. Each leg has an NMOS charge transfer switch connected between the stage input and the first plate of the stage boosting capacitor and a PMOS charge transfer switch connected between the first plate of the stage boosting capacitor and the stage output. To reduce charge pump area, the NMOS and PMOS charge transfer switches are formed to have a same resistance value when in an on state, where to achieve this the NMOS charge transfer switches are formed with wider control gates than the PMOS charge transfer switches.

The application generally discloses systems and methods of generating a voltage waveform having an amplitude three times an input voltage amplitude using a plurality of low voltage (LV) triple well (TWL) N-type field effect devices. The method includes: receiving a first input voltage at a first input of a double switch charge transfer switch (CTS) circuit; applying a 2× kick voltage to a first capacitor coupled to a first portion of the double switch CTS circuit, the first capacitor configured to discharge a kick voltage to a source of a first LV TWL N-type field effect device; and applying a 1× kick voltage to a second capacitor coupled a second portion of the double switch CTS circuit, the second capacitor configured to discharge a kick voltage to a source of a second LV TWL N-type field effect device.