Check patentability & draft patents in minutes with Patsnap Eureka AI!

Dual-port memory circuit based on nandflash

A memory circuit, dual-port technology, used in instruments, electrical digital data processing, etc., can solve problems such as increasing limitations and complex Nandflash applications, and achieve the effect of expanding the scope of application

Active Publication Date: 2017-03-15
SHANGHAI HUAHONG INTEGRATED CIRCUIT
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] With the development of Nandflash technology, the application of Nandflash is becoming more and more complex. The single-port feature of Nandflash increases the limitations of its use in complex environments.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Dual-port memory circuit based on nandflash
  • Dual-port memory circuit based on nandflash
  • Dual-port memory circuit based on nandflash

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] Referring to the accompanying drawings, the described dual-port memory circuit based on Nandflash includes: a first port instruction queue module, a second port instruction queue module, a first port DMA controller, a second port DMA controller, and an instruction execution control logic Module, Nandflash interface control circuit and Nandflash storage array module.

[0023] The "port alternation" principle used by the Nandflash data bus is: when both the first port and the second port use the Nandflash data bus, the first port and the second port use the Nandflash data bus alternately.

[0024] In the initial state, the first port preferentially uses the Nandflash data bus. If the first port used the Nandflash data bus last time, then the second port used the Nandflash data bus this time; if the second port used the Nandflash data bus last time, then the first port used the Nandflash data bus this time.

[0025] The contents of the Nandflash operation instructions sto...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a Nandflash-based dual-port memory circuit which comprises a first port instruction queue module, a second port instruction queue module, a first port DMA (direct memory access) controller, a second port DMA controller, a Nandflash memory array, an instruction execution control logic module and a Nandflash interface controller, wherein the instruction execution control logic module is used for arbitrating and controlling the operation of the first port instruction queue module and the second port instruction queue module, and arbitrating and controlling the operation of the first port DMA controller and the second port DMA controller; and the Nandflash interface controller is used for controlling the data transmission with the Nandflash memory array, and controlling the control logic of the instruction execution control logic module. According to the Nandflash-based dual-port memory circuit, a Nandflash memory is provided with two ports through the time division multiplexing of the Nandflash interface, therefore, the memory system can perform read-write operation on the two ports simultaneously, and the application range of the Nandflash memory is expanded.

Description

technical field [0001] The invention relates to a Nandflash (NAND flash memory) memory circuit, in particular to a Nandflash-based dual-port memory circuit. Background technique [0002] Nandflash has developed by leaps and bounds in recent years, from SLC (1 bit / unit) technology to MLC (multiple bits / unit) technology, and the production process of Nandflash is also constantly improving. With the development of technology, the capacity of Nandflash is continuously increasing, the cost per unit capacity is also greatly reduced, and there are more and more fields where Nandflash is applied. [0003] With the development of Nandflash technology, the application of Nandflash is becoming more and more complex. The single-port feature of Nandflash increases the limitations of its use in complex environments. Contents of the invention [0004] The technical problem to be solved by the present invention is to provide a dual-port memory circuit based on Nandflash, the storage syst...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F13/28
Inventor 迟志刚
Owner SHANGHAI HUAHONG INTEGRATED CIRCUIT
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More