Display panel, switching tube and manufacturing method thereof

Abstract

A display panel, a switch tube and a manufacturing method therefor. The method comprises: forming a first electrode (402), a first insulation layer (403), a sacrificial layer (404) and a second / third electrode metal layer (405) of a switch tube on a substrate (401) successively; and then, etching the second / third electrode metal layer (405), so as to expose at least a part of the sacrificial layer (404); and etching the exposed sacrificial layer (404), so as to expose a part of the first insulation layer (403), where under the same etching condition, the etching selection ratio of the sacrificial layer (404) to the first insulation layer (403) is greater than a first set value, and the first set value is greater than 1. By means of the above-mentioned method, the stability and electron migration rate of the switch tube can be improved.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a display panel, a switch tube and a manufacturing method thereof. Background technique [0002] Compared with the etching stop (Etchingstop) oxide TFT, the planar (Coplanar) type oxide TFT can reduce the amount of mask used in the process and obtain a shorter channel length, which is conducive to shortening the production cycle and reducing consumption. can. [0003] Such as figure 1 As shown, a planar oxide TFT generally includes a gate 101, a gate insulating layer 102, a source / drain layer 103, a semiconductor layer 104, and a passivation layer 105, wherein the source / drain layer 103 includes a molybdenum metal layer 1031 and aluminum metal layer 1032 . The molybdenum metal layer 1031 serves as the bottom layer of the source / drain layer 103 and is in contact with the gate insulating layer 102 , which can improve the adhesion between the source / drain layer 103 and the gate insu...

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Problems solved by technology

Due to the poor selectivity of the dry etching of the molybdenum metal layer 1031 and the gate insulating layer 102, it is easy to cause damage to the gate insulating layer 102 when the molybdenum metal layer 1031 is over-etched, as shown by the oval dotted line in step S3, due to The overetching of the molybdenum metal layer 1031 causes part of the gate insulating layer 102 to be etched away, causing damage to the gate insulating layer 102, which will reduce the stability and electron mobility of the thin film transistor

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