Transistors with isolation regions

Abstract

A transistor device is described that includes a source, a gate, a drain, a semiconductor material which includes a gate region between the source and the drain, a plurality of channel access regions in the semiconductor material on either side of the gate, a channel in the semiconductor material having an effective width in the gate region and in the channel access regions, and an isolation region in the gate region. The isolation region serves to reduce the effective width of the channel in the gate region without substantially reducing the effective width of the channel in the access regions. Alternatively, the isolation region can be configured to collect holes that are generated in the transistor device. The isolation region may simultaneously achieve both of these functions.

Description

technical field [0001] Semiconductor electronic devices and assemblies are provided, as well as various circuit applications employing the semiconductor electronic devices and assemblies. Background technique [0002] To date, most transistors used in power electronics applications are typically fabricated from silicon (Si) semiconductor material. Common transistor devices for power applications include Si CoolMOS, Si Power MOSFET, and Si Insulated Gate Bipolar Transistors (IGBTs). Although Si power devices are relatively inexpensive, they suffer from a number of disadvantages, including relatively slow switching speeds and high electrical noise. Recently, silicon carbide (SiC) power devices have been considered due to their superior properties. Emerging III-N semiconductor devices such as gallium nitride (GaN) devices are now attractive candidates, capable of carrying large currents, withstanding high voltages and offering very low on-resistance and Fast switching times....

AI Technical Summary

Problems solved by technology

A high voltage device capable of blocking at least a voltage equal to the maximum voltage of the high voltage supply or the circuit using it

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