Devices and circuits with programmable metallization cells and methods of operation and manufacture thereof

Abstract

The invention discloses a storage device and integrated circuit with a programmable metallization unit, and an operation and manufacturing method thereof. The programmable metallization device comprises a first electrode, a second electrode, a first dielectric layer, a second dielectric layer and an ion providing layer, wherein the first dielectric layer, the second dielectric layer and the ion providing layer are located between the first electrode and the second electrode in series. When the programmable metallization device is operated, a conductive bridge is formed or damaged in the first dielectric layer for expressing a data value. When the programmable metallization device is read, reading bias voltage is provided, so a temporary conductive bridge is formed in the second dielectric layer, and a conduction path is formed and penetrates through a storage unit when the conductive bridge exists in the first dielectric layer. If the conductive bridge does not exist in the first dielectric layer when being read, the conduction path is not formed. When the reading bias voltage is removed, the conductive bridge formed in the second dielectric layer is damaged if any conductive bridges still exist in the first dielectric layer correspondingly.

Description

technical field

[0001] The invention relates to a programmable metallization unit technology, in particular to a memory device and an integrated circuit with a programmable metallization unit and its operation and manufacturing method. Background technique

[0002] Programmable Metallization Cell (Programmable Metallization Cell, PMC) technology has been studied for non-volatile memories, reconfigurable logic systems, and other switching applications due to its low current, scalability, and high programming speed. Resistive switching of programmable metallization cell devices operates via electrochemical (EC) or electrolytic creation or removal of conductive bridges. Hence, programmable metallization cell devices also represent conducting bridge (CB) devices or electrochemical devices.

[0003] The programmable metallization unit device has an on state (ON state) and an off state (OFF state). In the on state, the conductive bridge completes the conduction path between the e...

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