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Solid-state imaging device, driving method, and electronic device

A solid-state imaging device and pixel technology, applied in televisions, electrical components, color televisions, etc., can solve problems such as leakage, difficulty in accurately counting pixel reset components, etc.

Active Publication Date: 2017-08-11
SONY CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, in the case where the CMOS image sensor is illuminated by high-brightness light such as sunlight, the charge photoelectrically converted by the photodiode can leak to the floating diffusion
[0008] In this case, it is difficult to accurately count the reset component of the pixel

Method used

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  • Solid-state imaging device, driving method, and electronic device
  • Solid-state imaging device, driving method, and electronic device
  • Solid-state imaging device, driving method, and electronic device

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Embodiment Construction

[0038] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings.

[0039] figure 1 is a block diagram showing a configuration example of a solid-state imaging device to which an embodiment of the present disclosure is applied. figure 1 The solid-state imaging device 10 shown in is configured as, for example, a CMOS image sensor.

[0040] figure 1 The CMOS image sensor 10 shown in has a pixel array 11, comparators 12-1 to 12-n, up / down counters (denoted as counters) 13-1 to 13-n, and latch circuits (denoted as latches) 14-1 to 14-n.

[0041] In addition, the CMOS image sensor 10 has a vertical scanning circuit 21 , a timing control circuit 22 , a horizontal scanning circuit 23 , and a signal processing section 24 .

[0042] The pixel array 11 has a plurality of pixels arranged in a two-dimensional matrix. Each pixel arranged in the pixel array 11 receives light and performs photoelectric conversion, thereby outputting...

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Abstract

A solid-state imaging device is disclosed, including a pixel array, a pixel signal generation section, and a control section. The pixel signal generating section includes a comparator and a counter. In the case where an enable signal is supplied from the control section, when the count value of the counter in the P-phase period of detecting the reset level is a limit value, the counter is set at the time of detecting the signal level. The count value in the D-phase period is set as a limit value regardless of the output of the comparator.

Description

technical field [0001] The present disclosure relates to a solid-state imaging device, a driving method, and an electronic device, and in particular, to a solid-state imaging device, a driving method, and an electronic device that allow an image sensor to obtain a natural and beautiful image. Background technique [0002] In recent years, CMOS image sensors have been widely used as imaging devices. In addition, improvement of CMOS image sensors to be more suitable for high-speed imaging has also been proposed. For example, there has been proposed a CMOS image sensor that uses an up / down (up / down) counter to obtain a high frame rate and high resolution without increasing its circuit size (see Japanese Patent Application Laid-Open (Laid-open) No. 2008-103647 and 2005-278135). [0003] In such a CMOS image sensor, the up / down counter performs a down count operation for the first time and an up count operation for the second time, thereby automatically performing a subtraction...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H04N5/367H04N5/374H04N5/3745H04N5/378
CPCH04N25/627H04N25/633H04N25/78H04N25/75H04N25/63
Inventor 小田原正起渡边崇规松本静德
Owner SONY CORP