Unlock instant, AI-driven research and patent intelligence for your innovation.

Method for electron beam patterning

An electron beam, patterning technology, applied in the semiconductor field, can solve problems such as interference with imaging layers and deterioration of imaging quality

Active Publication Date: 2017-06-13
TAIWAN SEMICON MFG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Manipulation of the resist (such as conductive layer coating or resist thickness adjustment) actually disturbs the imaging layer and results in a degradation of image quality or means more attempts at image quality optimization

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for electron beam patterning
  • Method for electron beam patterning
  • Method for electron beam patterning

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0037] The present invention generally relates to the field of semiconductor manufacturing. In particular, the invention relates to electron beam patterning methods. While the examples herein discuss the application of these techniques to write to photolithographic masks and semiconductor wafers, it should be understood that the scope of embodiments may include any suitable medium using e-beam technology.

[0038] The following invention provides many different embodiments or examples for implementing the different components of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples and are not intended to be limiting.

[0039] figure 1 is a flowchart of an e-beam lithography patterning method 100 constructed in accordance with aspects of the present invention in one or more embodiments. figure 2 is a cross-sectional view of a substrate 200 patterned by method 100 . ima...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
relative permittivityaaaaaaaaaa
Login to View More

Abstract

A method for electron-beam patterning includes forming a conductive material layer on a substrate; forming a bottom anti-reflective coating (BARC) layer on the conductive material layer; forming a resist layer on the BARC layer; and directing an electron beam (e-beam) to the sensitive resist layer for an electron beam patterning process. The BARC layer is designed such that a top electrical potential of the resist layer is substantially zero during the e-beam patterning process.

Description

technical field [0001] The present invention relates generally to the field of semiconductors, and more particularly to methods for electron beam patterning. Background technique [0002] Semiconductor integrated circuit (IC) technology continues to evolve to circuit layouts with smaller feature sizes and increased densities. As a result of this continuous advancement, lithographic equipment continues to become more expensive and more complex. Electron beam (or "e-beam") technology is used to pattern the substrate. [0003] Electron beam patterning involves the process of using an electron beam to induce changes in a medium. In particular, some e-beam processes use an electron beam to write a design pattern on a resist layer. E-beam patterning provides a method of creating features on substrates where the features are smaller than the resolution limit of light. [0004] One problem with e-beam writing, however, is that the resists used in e-beam writing lithography are i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/78G03F1/56H01L21/027H01L21/311
CPCG03F1/56G03F1/78G03F7/2063H01L21/0276H01L21/0277
Inventor 王文娟林世杰许照荣林本坚
Owner TAIWAN SEMICON MFG CO LTD