Method for Suppressing Current Dependence of Gain of Semiconductor Device
A semiconductor, dependent technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of reducing current gain, narrowing the application voltage range of transistors, and reducing breakdown voltage.
Inactive Publication Date: 2016-03-02
NAT INST OF ADVANCED IND SCI & TECH
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Problems solved by technology
This can result in reduced current gain at very low current levels near values of the leakage current
Therefore, the range of gain variation is unfavorably narrow for its small collector current
In addition, the breakdown voltage between the base and emitter becomes smaller, and the application voltage range of the transistor becomes narrower, which is not preferable
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[0050] figure 2 A plan view of a semiconductor device in an embodiment according to the present invention is illustrated. image 3 Is along figure 2 The cross-sectional view of the semiconductor device cut by dots 1-2 and the dotted line in the plan view shown in FIG. In the figure, reference numeral 110 denotes a first semiconductor region. Reference numeral 111 denotes an insulating film provided on the first, second, third, and fourth surfaces for passivation purposes. Reference numeral 120 denotes a second semiconductor region provided to be in contact with the surface of the first semiconductor region. Reference numeral 130 denotes a third semiconductor region provided to be in contact with the surface of the second semiconductor region. Reference numeral 140 denotes a fourth semiconductor region provided to be separated from the third semiconductor and in contact with the surface of the second semiconductor region. Unlike the graft base, the fourth semiconductor regio...
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An object of the present invention is to amplify the current which varies by a factor of several orders of magnitude with a constant gain without using a complicated circuit. In order to solve the problem, with a semiconductor device includes a first semiconductor region of a first conductivity, a second semiconductor region which is an opposite conductivity and is in contact with the first semiconductor region and a third semiconductor region which is the first conductivity and is in contact with the second semiconductor region at the second surface, a fourth semiconductor region in contact with the second semiconductor region is provided so as to be separated from the third semiconductor region and enclose the third semiconductor region and an impurity concentration of the fourth semiconductor region is larger than that of the second semiconductor region.
Description
Technical field [0001] The present invention relates to a method for suppressing the dependence of the gain of a semiconductor device on current, and in particular to a method for reducing the dependence of the current gain of a bipolar transistor on the base current or the collector current. Background technique [0002] Conventional bipolar transistors are known because of the fact that the current gain is small in very low current levels, large in medium current levels, and due to the high-level injection effect in high current levels And again smaller. For example, on pages 142-143 of Non-Patent Document 1 and Figure 7 , The following is described as a typical example: the current gain is 35 at a collector current of 100pA, and increases by about an order of magnitude according to the increase of the collector current, thereby reaching a maximum gain of 400 at about 100μA, and Then decrease for larger collector current. [0003] On the other hand, for achieving a smaller exte...
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IPC IPC(8): H01L21/331H01L29/732
CPCH01L29/66234H01L29/0692H01L29/0821H01L29/1004H01L29/41708H01L29/66272H01L29/7322
Inventor 林丰永宗靖太田敏隆
Owner NAT INST OF ADVANCED IND SCI & TECH