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Abstract

The present invention relates to a light emitting diode, which comprises: a first semiconductor layer, an active layer and a second semiconductor layer are sequentially stacked on a surface of the substrate, and the first semiconductor layer is arranged close to the substrate, and the first electrode Electrically connected to the first semiconductor layer, the second electrode is electrically connected to the second semiconductor layer, further comprising: a first optically symmetrical layer disposed on the surface of the second semiconductor layer away from the active layer; a metal plasma The generating layer is arranged on the surface of the first optically symmetrical layer away from the active layer; a second optically symmetrical layer is arranged on the surface of the metal plasma generating layer away from the active layer; the equivalent refractive index of the second optically symmetrical layer n1, the difference between the equivalent refractive index n2 of the substrate, the first semiconductor layer, an active layer, a second semiconductor layer and the second optically symmetrical layer?n is greater than or equal to 0 and less than or equal to 0.5, where?n=| n1-n2|.

Description

technical field [0001] The invention relates to a light emitting diode, in particular to a light emitting diode with a lateral structure. Background technique [0002] High-efficiency blue, green and white light semiconductor structures made of gallium nitride semiconductor materials have significant characteristics such as long life, energy saving, and environmental protection. They have been widely used in large-screen color displays, automotive lighting, traffic signals, multimedia displays and optical communications. And other fields, especially in the field of lighting has broad development potential. [0003] A traditional light-emitting diode usually includes a substrate, an N-type semiconductor layer, a P-type semiconductor layer, an active layer arranged between the N-type semiconductor layer and the P-type semiconductor layer, and a P-type electrode (usually transparent electrode) and the N-type electrode disposed on the N-type semiconductor layer. The N-type sem...

AI Technical Summary

Problems solved by technology

However, since the refractive index of the semiconductor is greater than that of air, most of the near-field evanescent light waves from the active layer are confined inside the light-emitting diode until they are completely absorbed by the material in the light-emitting diode, which affects the light extraction rate of the light-emitting diode.

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