Flash memory quality detection method and device

A quality detection method and flash memory technology, applied in static memory, instruments, etc., can solve the problems of long time consumption and low efficiency of flash memory detection technology, and achieve the effect of improving the utilization rate of flash memory

Inactive Publication Date: 2014-01-01
SHENZHEN NETCOM ELECTRONICS CO LTD
View PDF4 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a flash memory quality detection metho

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash memory quality detection method and device
  • Flash memory quality detection method and device
  • Flash memory quality detection method and device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] figure 1 The implementation flow of the flash memory quality detection method provided by Embodiment 1 of the present invention is shown, and the process of the method is described in detail as follows:

[0023] In step S101, the quality of the flash memory is inspected through at least one of the following parameters of the flash memory: erasing time, programming time, initial error check and ECC parameters of the flash memory.

[0024] Exemplarily, the quality detection of the flash memory through the erasing time of the flash memory includes:

[0025] Extracting N sample blocks from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0026] Perform an erasing (charging) operation on each of the N sample blocks, that is, charge the storage cells inside the flash memory chip; specifically, sequentially charge each of the N sample blocks Erase (charge) operation for each sample block;

[0027] After the erasing operation, perf...

Embodiment 2

[0052] figure 2 The implementation flow of the flash memory quality detection method provided by the second embodiment of the present invention is shown, and the process of the method is described in detail as follows:

[0053] In step S201, N sample blocks are extracted from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0054] In step S202, an erasing operation is performed on each of the N sample blocks;

[0055] In step S203, after the erasing operation, perform a programming operation on each of the N sample blocks, the programming operation is to write the same specific random number into each sample block;

[0056] In step S204, perform an erasing operation on each sample block written with the same specific random number, and record the time when each sample block completes the erasing operation;

[0057] In step S205, the quality of the flash memory is determined according to the time when each sample block completes th...

Embodiment 3

[0060] image 3 The implementation flow of the flash memory quality detection method provided by Embodiment 3 of the present invention is shown, and the process of the method is described in detail as follows:

[0061] In step S301, N sample blocks are extracted from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0062] In step S302, an erasing operation is performed on each of the N sample blocks;

[0063] In step S303, after the erasing operation, perform a programming operation on each of the N sample blocks, the programming operation is to write the same specific random number into each sample block, and recording the time for each sample block to complete the programming operation;

[0064] In step S304, the quality of the flash memory is determined according to the time for each sample block to complete the programming operation. Specifically, according to the time for each sample block to complete the programming operatio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention is suitable for the technical field of flash memory devices and provides a flash memory quality detection method and device. The method comprises the step of detecting the quality of the flash memory through at least one parameter of erasing time, programming time and initial error checking and ECC (Error Correction Code) parameters of the flash memory. By utilizing the method and the device, the flash memory quality detection efficiency and accuracy can be effectively increased.

Description

technical field [0001] The invention belongs to the technical field of flash memory storage devices, and in particular relates to a flash memory quality detection method and device. Background technique [0002] With the development of information technology, more and more information systems (such as MP3, digital cameras, smart TVs, etc.) need built-in rewritable non-volatile storage media to store data. Among the existing non-volatile storage media, flash memory has been widely used in the industry due to its advantages of small size, low power consumption, and insusceptibility to physical damage. [0003] Although flash memory has many advantages such as being writable, erasable, and data can still be saved after power failure. However, prior to mass production of the existing flash memory, there may be quality differences between different models, or even different batches of the same model, due to problems in the production process. In the prior art, the quality inspe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C29/08
Inventor 郭丹李志雄
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap