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Flash memory quality detection method and device

A quality detection method and flash memory technology, applied in static memory, instruments, etc., can solve the problems of long time consumption and low efficiency of flash memory detection technology, and achieve the effect of improving the utilization rate of flash memory

Inactive Publication Date: 2014-01-01
SHENZHEN NETCOM ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the embodiments of the present invention is to provide a flash memory quality detection method to solve the problems of long time-consuming and low efficiency of the existing flash memory detection technology

Method used

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  • Flash memory quality detection method and device

Examples

Experimental program
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Embodiment 1

[0022] figure 1 The implementation flow of the flash memory quality detection method provided by Embodiment 1 of the present invention is shown, and the process of the method is described in detail as follows:

[0023] In step S101, the quality of the flash memory is inspected through at least one of the following parameters of the flash memory: erasing time, programming time, initial error check and ECC parameters of the flash memory.

[0024] Exemplarily, the quality detection of the flash memory through the erasing time of the flash memory includes:

[0025] Extracting N sample blocks from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0026] Perform an erasing (charging) operation on each of the N sample blocks, that is, charge the storage cells inside the flash memory chip; specifically, sequentially charge each of the N sample blocks Erase (charge) operation for each sample block;

[0027] After the erasing operation, perf...

Embodiment 2

[0052] figure 2 The implementation flow of the flash memory quality detection method provided by the second embodiment of the present invention is shown, and the process of the method is described in detail as follows:

[0053] In step S201, N sample blocks are extracted from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0054] In step S202, an erasing operation is performed on each of the N sample blocks;

[0055] In step S203, after the erasing operation, perform a programming operation on each of the N sample blocks, the programming operation is to write the same specific random number into each sample block;

[0056] In step S204, perform an erasing operation on each sample block written with the same specific random number, and record the time when each sample block completes the erasing operation;

[0057] In step S205, the quality of the flash memory is determined according to the time when each sample block completes th...

Embodiment 3

[0060] image 3 The implementation flow of the flash memory quality detection method provided by Embodiment 3 of the present invention is shown, and the process of the method is described in detail as follows:

[0061] In step S301, N sample blocks are extracted from the same layer of the flash memory chip, where N is an integer greater than or equal to 1;

[0062] In step S302, an erasing operation is performed on each of the N sample blocks;

[0063] In step S303, after the erasing operation, perform a programming operation on each of the N sample blocks, the programming operation is to write the same specific random number into each sample block, and recording the time for each sample block to complete the programming operation;

[0064] In step S304, the quality of the flash memory is determined according to the time for each sample block to complete the programming operation. Specifically, according to the time for each sample block to complete the programming operatio...

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Abstract

The invention is suitable for the technical field of flash memory devices and provides a flash memory quality detection method and device. The method comprises the step of detecting the quality of the flash memory through at least one parameter of erasing time, programming time and initial error checking and ECC (Error Correction Code) parameters of the flash memory. By utilizing the method and the device, the flash memory quality detection efficiency and accuracy can be effectively increased.

Description

technical field [0001] The invention belongs to the technical field of flash memory storage devices, and in particular relates to a flash memory quality detection method and device. Background technique [0002] With the development of information technology, more and more information systems (such as MP3, digital cameras, smart TVs, etc.) need built-in rewritable non-volatile storage media to store data. Among the existing non-volatile storage media, flash memory has been widely used in the industry due to its advantages of small size, low power consumption, and insusceptibility to physical damage. [0003] Although flash memory has many advantages such as being writable, erasable, and data can still be saved after power failure. However, prior to mass production of the existing flash memory, there may be quality differences between different models, or even different batches of the same model, due to problems in the production process. In the prior art, the quality inspe...

Claims

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Application Information

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IPC IPC(8): G11C29/08
Inventor 郭丹李志雄
Owner SHENZHEN NETCOM ELECTRONICS CO LTD
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