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Semiconductor device and method of manufacturing the same

A semiconductor and device technology, applied in the field of semiconductor devices and their manufacturing, can solve the problems of expensive ET-SOI substrates and the like

Active Publication Date: 2016-06-29
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, ET-SOI substrates are expensive

Method used

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  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same
  • Semiconductor device and method of manufacturing the same

Examples

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Embodiment Construction

[0009] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concept of the present disclosure.

[0010] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, s...

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Abstract

The application discloses a semiconductor device and a manufacturing method thereof. An exemplary method includes: sequentially forming a sacrificial layer and a semiconductor layer on a substrate; forming a first masking layer on the semiconductor layer; using the first masking layer as a mask to form an opening into the substrate; through the opening, selectively removing at least a part of the sacrificial layer and filling it with an insulator material; forming one of the source region and the drain region in the opening; forming a second masking layer on the substrate; using the second masking layer as a mask, forming the source region and the drain region The other one of the drain regions; removing a part of the second masking layer; and forming a gate dielectric layer, and forming a gate conductor in the form of a sidewall on the sidewall of the remaining part of the second masking layer.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and more particularly, to a semiconductor device and a manufacturing method thereof. Background technique [0002] As the size of semiconductor devices becomes smaller and smaller, the short channel effect becomes more and more obvious. To this end, it is proposed to use a gate stack comprising a high-K gate dielectric and a metal gate conductor. To avoid performance degradation of gate stacks, semiconductor devices including such gate stacks are typically fabricated using a replacement gate process. The replacement gate process involves forming a high-K gate dielectric and a metal gate conductor in the void defined between the gate spacers. However, due to shrinking device dimensions, it is increasingly difficult to form high-K gate dielectrics and metal conductors in such small pores. [0003] On the other hand, semiconductor devices formed on extremely thin semiconductor-on-insulator ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/423H01L29/51
CPCH01L21/28531H01L29/4238H01L29/66477H01L29/66545H01L29/66772H01L29/78618H01L29/78639H01L29/78654H01L21/2815H01L29/517H01L29/66628H01L29/66636H01L29/7848
Inventor 朱慧珑梁擎擎钟汇才吴昊
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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