Method for producing silicon carbide substrate

Abstract

A method for manufacturing a silicon carbide substrate includes the steps of preparing an ingot of single crystal silicon carbide, obtaining a silicon carbide substrate by cutting the ingot, and forming a chamfer portion in a region including an outer peripheral surface of the silicon carbide substrate. In the step of obtaining the silicon carbide substrate, the ingot is cut such that a main surface of the silicon carbide substrate forms an angle of not less than 10° with respect to a {0001} plane.

Description

technical field [0001] The present invention relates to a method of manufacturing a silicon carbide substrate, and more particularly, to a method of manufacturing a silicon carbide substrate capable of suppressing the occurrence of cracks during formation of chamfered portions. Background technique [0002] In recent years, silicon carbide has been increasingly used as a material for forming semiconductor devices in order to realize higher breakdown voltage, lower loss, and use thereof in high-temperature environments, etc. of semiconductor devices. Silicon carbide is a wide-bandgap semiconductor with a larger bandgap than silicon, which has traditionally been widely used as a material for forming semiconductor devices. Therefore, by adopting silicon carbide as a material for forming a semiconductor device, higher breakdown voltage, lower on-resistance, etc. of the semiconductor device can be realized. In addition, semiconductor devices using silicon carbide as a material a...

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Problems solved by technology

However, silicon carbide has extremely high hardness, so it is not easy to cut silicon carbide

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