A fully crimped power device

Abstract

The invention relates to a power semiconductor device, in particular to a full-pressing type power device. The full crimping power device realizes full crimping contact with the silicon wafer by the upper and lower electrodes and the multi-layer material, which eliminates the device failure caused by welding fatigue. Compared with the traditional IGBT module used as a single device, the chip tightening force and the device tightening force are provided by different devices, which effectively improves the tightening force when the devices are used in series, and is no longer limited by the pressure bearing limit of the power chip. Requirements for using multiple devices in series.

Description

technical field [0001] The invention relates to a power semiconductor device, in particular to a fully crimped power device. Background technique [0002] Since the insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) began to be officially produced in 1986 and gradually serialized, its packaging quality and reliability have always affected its application in high-power applications such as industrial control, locomotive traction, and power systems. use and promotion. [0003] The IGBT has continued to grow for several years as a key power semiconductor device in power electronic systems because it enables higher efficiencies and miniaturized designs for power electronic devices and equipment. This means that the application field of IGBT devices has been extended to a wide range, not only in industry, but also in many other power conversion systems, it has replaced high-power bipolar transistors (GTRs), and even substitute gate turn-off Realistic Tr...

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Problems solved by technology

[0004] Due to the limit of the voltage withstand limit of silicon materials, the highest voltage of existing IGBT devices is 6500V, and in devices with voltage applications up to tens or even hundreds of kV, the application of IGBTs is mostly used in series, and each valve section requires multiple Dozens of IGBT devices are connected in series. In order to ensure the safety during installation and transportation, it is often necessary to apply a fastening force of up to 100kN. It is difficult for ordinary modules and traditional crimping devices to meet such fastening force requirements.

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