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A high-power crimping type igbt module

A crimping type, high-power technology, applied in the direction of electrical components, electric solid devices, circuits, etc., can solve the problems of isolation effect degradation, etc., and achieve the effect of eliminating device failure, low thermal resistance, and high reliability in series use

Active Publication Date: 2017-06-23
STATE GRID CORP OF CHINA +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a non-hermetic package, insulating materials such as silicone gel or epoxy resin are poured inside the module to isolate the contact between the chip and the external environment (water, air, dust), but the potting material usually also isolates the heat transfer and will last for a long time. During the working process, the isolation effect degrades

Method used

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  • A high-power crimping type igbt module
  • A high-power crimping type igbt module
  • A high-power crimping type igbt module

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Embodiment Construction

[0038] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0039] The present invention provides a high-power crimping type IGBT module, the module is a vertical stacked packaging structure, the cross-sectional structure diagram of the high-power crimping IGBT module is as follows figure 1 As shown, it includes subunit housing 1, subunit housing cover assembly 2 and module housing 3; subunit housing 1 and subunit housing cover assembly 2 are encapsulated by cold pressure welding to form a subunit, and the order of subunits is not less than one Arrangement and assembly in the module casing 3, the subunits are displaced relative to the module casing 3 in the vertical direction, and the distance is 2-3mm

[0040] The current path of the module flows from the subunit case cover assembly 2 to the subunit case 1 in the vertical direction; the module installation fastening force is joi...

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Abstract

The invention relates to a high-power crimp-connection type IGBT module which comprises a hermetic package shell formed by subunit shells (1) and subunit shell cover components (2). At least one semiconductor chip (1-1), first auxiliary pieces (1-6), at least one second auxiliary piece (1-2) and at least one third auxiliary piece (1-3) form interlayer structures, and the interlayer structures are arranged in the hermetic package shell between the subunit shells (1) and the subunit shell cover components (2). One or more subunits are distributed in a module outer shell (3) in parallel to form the high-power crimp-connection type IGBT module. The high-power pressure crimping-connection type IGBT module has the advantages of being low in thermal resistance, high in reliability, and suitable for being used in series connection.

Description

technical field [0001] The invention relates to a high-power semiconductor device, in particular to a high-power crimping type IGBT module. Background technique [0002] Insulated gate bipolar transistor (Insulate-Gate Bipolar Transistor—IGBT) combines the advantages of power transistor (Giant Transistor—GTR) and power field effect transistor (Power MOSFET), has good characteristics, and has a wide range of applications; IGBT is also a three-terminal Devices: Gate, Collector and Emitter. IGBT (Insulated Gate Bipolar Transistor) is a bipolar device with MOS structure, which belongs to the power device with high-speed performance of power MOSFET and low resistance performance of bipolar. [0003] Due to the limit of the voltage withstand limit of silicon materials, the highest voltage of existing IGBT devices is 6500V, and in devices with voltage applications up to tens or even hundreds of kV, the application of IGBTs is mostly used in series, and each valve section requires ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L25/11H01L23/04H01L23/367
Inventor 韩荣刚张朋刘文广李现兵
Owner STATE GRID CORP OF CHINA