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Membrane surface windowing process for solar cell

A technology of solar cell and window opening technology, which is applied in the direction of circuits, photovoltaic power generation, electrical components, etc., can solve the problems of high initial investment cost of laser equipment, high operating cost of corrosion slurry, etc., and achieve high-efficiency gas corrosion rate, high production capacity, and process stable effect

Inactive Publication Date: 2014-03-12
中电电气(扬州)光伏有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a solar cell film surface window opening process, which solves the above-mentioned defects in the prior art, and effectively overcomes the shortcomings of high initial investment cost of laser equipment and high post-operation cost of corrosion slurry through the present invention

Method used

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  • Membrane surface windowing process for solar cell
  • Membrane surface windowing process for solar cell

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Embodiment Construction

[0012] Further illustrate the present invention in conjunction with accompanying drawing and embodiment, as figure 1 As shown, the present invention uses the silicon chip 7 coated with SiO2 (or SiNx / Al2O3 / a-Si and other thin films that can play passivation and anti-reflection effects) film. The corrosive gas enters the cavity 1 from the inlet pipeline 2 and comes out from the gas outlet pipeline 4. The gas inlet pipeline 2 and the gas outlet pipeline 4 can be connected and recycled according to the process requirements or not. Such as figure 1 As shown, the window position 6 in the cavity 1 needs to communicate with the internal gas, while the position of the vacuum pipeline 5 is isolated from the cavity 1, and the corrosive gas directly contacts the film surface of the coated silicon wafer 7 through the window position 6 to achieve To react with the membrane surface to remove the membrane surface, the vacuum line 4 sucks the silicon wafer 7 by introducing negative pressure. ...

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Abstract

The invention relates to a membrane surface windowing process for a solar cell, and belongs to the technical field of manufacturing of solar photovoltaic cells. The process is mainly characterized in that etchant gases are injected into a cavity with a silicon wafer to be windowed; the flow of the etchant gases is controlled to be 0-5L / m. According to the membrane surface windowing process for the solar cell, gases (gases which can etch a certain type of thin films, such as hydrofluoric acid gas or a mixture of the hydrofluoric acid gas and added additives) which can etch SiO2 (or all the thin films with the effects of passivation and decrease, such as SiNx / Al2O3 / a-Si) are adopted to etch a membrane surface and achieve the goal of windowing, the gaseous corrosion rate is high, the production capacity is high, the process is relatively stable and suitable for volume production, and the defects that the initial input cost for a laser mode is high, and the cost for later operation of corrosion slurry is high are effectively overcome.

Description

technical field [0001] The invention relates to a process for opening windows on the film surface of solar cells, belonging to the technical field of solar photovoltaic cell manufacturing. Background technique [0002] After the process of texturing, diffusion and PECVD, the solar cell has been made into a PN junction, which can generate current under light. In order to export the generated current, it is necessary to make positive and negative electrodes on the surface of the cell. The above is the production process of conventional battery technology. With the increasing maturity of industrial production technology, the high-efficiency battery technology in the laboratory is also gradually applied to industrial production. At present, the popular high-efficiency battery technology includes: selective emitter battery, back field passivation Chemical battery, interdigitated back contact battery (IBC battery), etc., and these battery processes involve plating with SiO2 (or Si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCH01L31/186Y02E10/50Y02P70/50
Inventor 叶权华郑飞
Owner 中电电气(扬州)光伏有限公司
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