Method of forming gettering layer

Abstract

Disclosed herein is a method of forming a gettering layer for capturing metallic ions on the back side of a semiconductor wafer formed with devices on the face side thereof. According to the method, a gettering layer can be formed in a way of good reproducibility without reducing rapture strength of a semiconductor device. The method includes irradiating the back-side surface of the semiconductor wafer with a pulsed laser beam having a pulse width corresponding to a thermal diffusion length of 10 to 230 nm, to thereby form the gettering layer.

Description

technical field [0001] The present invention relates to a method for forming a gettering layer for forming a gettering layer for trapping metal ions on the back surface of a semiconductor wafer on which devices are formed. Background technique [0002] In the manufacturing process of semiconductor devices, a plurality of rectangular regions are divided on the surface of a substantially disc-shaped semiconductor wafer by dividing lines called streets arranged in a grid, and ICs, LSI and other devices. By dividing the semiconductor wafer formed with a plurality of devices along the streets in this way, individual semiconductor devices are formed. In order to realize miniaturization and weight reduction of semiconductor devices, the back surface of the semiconductor device wafer is usually ground to a predetermined thickness before the semiconductor wafer is cut along the lanes to divide each rectangular region. [0003] And when grinding the back surface of the semiconductor...

AI Technical Summary

Problems solved by technology

[0008] However, in the method for manufacturing a semiconductor device described in Patent Document 1, a grinding deformation layer (gettering layer) composed of microcracks with a thickness of 0.2 μm or less is formed on the back surface of the semiconductor wafer, so there is a lack of reproducibility and difficulty. The problem of always forming a good getter layer

Images