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Transistors, semiconductor devices, and methods of manufacture thereof

A technology of transistors and semiconductors, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc.

Active Publication Date: 2014-03-26
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These smaller electronic components challenge the manufacturing process flow of semiconductor devices

Method used

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  • Transistors, semiconductor devices, and methods of manufacture thereof
  • Transistors, semiconductor devices, and methods of manufacture thereof
  • Transistors, semiconductor devices, and methods of manufacture thereof

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Embodiment Construction

[0034]The making and using of various embodiments of the invention are discussed in detail below. It should be appreciated, however, that the present invention provides many applicable concepts that can be implemented in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the invention, and do not limit the scope of the invention.

[0035] Embodiments of the present invention relate to the fabrication of semiconductor devices. This article describes novel transistors, semiconductor devices, and methods of making them. Transistors including III-V compound materials are disclosed. Group III materials include the following elements in the periodic table, such as B, Al, Ga, In, and T1. Group V materials include the following elements in the periodic table, such as N, P, As, Sb, and Bi. Group III and Group V materials may also include other elements in Group III and Group V, respectively.

[0036] Fi...

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Abstract

Transistors, semiconductor devices and methods of manufacture thereof are disclosed. In one embodiment, a method of manufacturing a semiconductor device includes forming a transistor over a workpiece. The transistor includes a sacrificial gate material comprising a group III-V material. The method includes combining a metal (Me) with the group III-V material of the sacrificial gate material to form a gate of the transistor comprising a Me-III-V compound material.

Description

[0001] Cross References to Related Applications [0002] This application is related to the following co-pending and commonly assigned U.S. patent applications, the entire disclosures of which are incorporated herein by reference: U.S. Patent Application No. 13 / 542,860 filed July 6, 2012" III-V Compound Semiconductor Device Having Metal Contacts and Method of Making the Same” and U.S. Patent Application No. 13 / 467,133, filed May 9, 2012, “III-V Compound Semiconductor Device Having Dopant Layer and Method of Making the Same ". technical field [0003] The present invention relates to the field of semiconductors, and more specifically, the present invention relates to a transistor, a semiconductor device and a manufacturing method thereof. Background technique [0004] Semiconductor devices are used in various electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by su...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/28H01L29/78H01L29/49
CPCH01L21/28H01L29/78H01L29/49H01L21/28264H01L29/4966H01L29/66522H01L21/182H01L29/66545H01L29/78681H01L21/18H01L29/778H01L29/205H01L29/7786H01L29/7788
Inventor 戈本·多恩伯斯查理德·奥克斯兰德
Owner TAIWAN SEMICON MFG CO LTD