Imprinted memory

A technology of memory and imprinting method, which is applied in the fields of instruments, semiconductor/solid-state device manufacturing, optics, etc., and can solve the problems that limit the wide application of mask-ROM

Active Publication Date: 2014-03-26
CHENGDU HAICUN IP TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After 90nm, the high cost of data mask will greatly limit the wide application of mask-ROM

Method used

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Embodiment Construction

[0015] In order to reduce data entry costs, the present invention proposes an imprinted memory, especially a three-dimensional imprinted memory (3D-iP for short). As far as its final physical structure is concerned, embossed memory is exactly the same as mask-ROM, and they both use data patterns in their data entry film to store data. The difference between imprinted memory and mask-ROM is that they use different data entry methods: mask-ROM uses photolithography, and imprinted memory uses embossing. However, the data templates used in imprinting are much cheaper than the data masks used in photolithography.

[0016] The imprint method achieves graphic conversion by applying pressure on the template to mechanically deform the imprint resist (see Chou et al. "Imprint-lithography with 25-nanometer resolution", Science Magazine, Vol. 272, 5258, pp. 85-87). Examples of imprint methods include thermoplastic nano-imprint lithography, photo nano-imprint lithography, electro-chemica...

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Abstract

The extensive application of a mask programming read-only memory is greatly limited due to high cost of data mask. The invention provides an imprinted memory, particularly relates to a three-dimensional imprinted memory (3D-iP for short). The imprinted memory adopts imprint lithography for recording data. The imprint lithography is also called as nano-imprint lithography (NIL for short), and the cost of a data template adopted in the imprint lithography is lower than the cost of a mask adopted in photolithography.

Description

technical field [0001] This invention relates to the field of integrated circuit memories and, more particularly, to mask-programmed read-only memories (mask-ROMs). Background technique [0002] Mask-ROM is used to store publications. It contains a data entry membrane. The graphics in the data entry film are data graphics, which represent the data it stores. figure 1 The mask-ROM embodiment is a cross-point (cross-point) array memory. It contains multiple top address lines (eg 2a-2d), bottom address lines (eg 1a-1d) and storage elements (eg 5aa-5dd). The width of the address line is f. Its data entry film is a layer of isolation dielectric film 3b, which blocks the current flow between the top address line and the bottom address line, and distinguishes the different states of the storage element through the presence or absence of data openings (such as channel holes). If there is a data opening at the storage unit 5aa, it represents '1'; there is no data opening at the ...

Claims

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Application Information

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IPC IPC(8): H01L21/8246G03F7/00B82Y10/00
CPCG03F7/0017B82Y10/00H10B20/20
Inventor 张国飙
Owner CHENGDU HAICUN IP TECH
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