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Quantum interference device, manufacturing method of quantum interference device, electronic apparatus, and atom cell module

A quantum interference and manufacturing method technology, applied in the field of atomic chamber modules, can solve the problems of atomic oscillator frequency temperature characteristic degradation, magnetic field variation, frequency temperature characteristic degradation, etc.

Inactive Publication Date: 2014-03-26
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] However, there is a problem that the magnetic field generated by the heater current fluctuates because a large heater current that fluctuates according to the external temperature flows in a portion very close to the gas cell, and the frequency temperature of the atomic oscillator characteristics will be degraded
In addition, there are problems such as the temperature characteristics of the buffer gas such as neon (Ne) and argon (Ar) injected into the gas cell and the circuit part of the atomic oscillator are easily affected by the external temperature as the atomic oscillator is miniaturized. The temperature characteristic becomes obvious, and the frequency temperature characteristic eventually deteriorates

Method used

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  • Quantum interference device, manufacturing method of quantum interference device, electronic apparatus, and atom cell module
  • Quantum interference device, manufacturing method of quantum interference device, electronic apparatus, and atom cell module
  • Quantum interference device, manufacturing method of quantum interference device, electronic apparatus, and atom cell module

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Deformed example 1

[0164] In the atomic oscillator of this embodiment, it may be modified such that the first feedback loop is used to control so that the energy difference between the excitation energy level of the alkali metal atoms sealed in the gas cell 110 and one ground state energy level is Corresponding wavelength λ 1 (frequency f 1 ) and the wavelength λ corresponding to the energy difference between the excited level and another ground state level 2 (frequency f 2 ), the central wavelength λ of the emitted light of the semiconductor laser 200 0 (center frequency is f 0 ) and λ 1 or lambda 2 almost identical (center frequency f 0 with f 1 or f 2 almost identical), and, through the second feedback loop, the frequency conversion circuit 290 converts the output signal of the modulation circuit 270 into a frequency equal to and ΔE 12 signal at the corresponding frequency.

[0165] Figure 21 (A) is showing the center wavelength λ 0 with lambda 2 A schematic diagram of the frequ...

Deformed example 2

[0167] The atomic oscillator of this embodiment may be modified to use an electro-optic modulator (EOM: Electro-Optic Modulator). That is, the semiconductor laser 200 generates a single frequency f corresponding to the set bias current regardless of the modulation based on the output signal (modulation signal) of the frequency conversion circuit 290 0 of light. The frequency is f 0 The light incident on the electro-optic modulator (EOM) is modulated by the output signal (modulation signal) of the frequency conversion circuit 290 . As a result, it is possible to generate Figure 5 light of the same spectrum. Then, the gas cell 110 is irradiated with light generated by the electro-optic modulator (EOM). In this atomic oscillator, a structure based on a semiconductor laser 200 and an electro-optical modulator (EOM) is equivalent to figure 1 or Figure 12 The light generating part 20.

[0168] In addition, an acousto-optic modulator (AOM: Acousto-Optic Modulator) may also ...

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Abstract

Provided are a quantum interference device, a manufacturing method of quantum interference device, an electronic apparatus, and an atom cell module, which can realize high frequency temperature characteristics with a small size. A manufacturing method of an atom oscillator (an example of a quantum interference device) includes an assembling process (S10,S20)of respectively disposing a gas cell (110), a semiconductor laser (200), a light detector (210), ICs of a circuit unit, heaters (120a,120b), and coils (130a,130b) at desired locations, and an adjusting process (S30-S70) of adjusting at least one of currents which flow through the coils (130a, 130b), and positions and shapes of the coils (130a, 130b) such that a frequency-temperature characteristic of a pair of resonance light beams becomes approximately flat.

Description

technical field [0001] The invention relates to a manufacturing method of a quantum interference device, a quantum interference device, electronic equipment and an atomic chamber module. Background technique [0002] like Figure 22 As shown, it is known that the cesium atom as a kind of alkali metal atom has 6S 1 / 2 The ground state energy level and 6P 1 / 2 、6P 3 / 2 These two excitation levels. In addition, 6S 1 / 2 、6P 1 / 2 、6P 3 / 2 Each energy level of has an ultrafine structure that splits into multiple energy levels. Specifically, 6S 1 / 2 With two ground state energy levels of F=3 and 4, 6P 1 / 2 With two excitation levels of F=3 and 4, 6P 3 / 2 It has four excitation levels of F=2, 3, 4, and 5. [0003] For example, at 6S 1 / 2 The cesium atom in the ground state energy level of F=3 can transition to 6P by absorbing the D2 line 3 / 2 Any one of the excitation energy levels of F=2, 3, and 4, but it cannot jump to the excitation energy level of F=5. in 6S 1 / 2 The cesium at...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03L7/26
CPCH01S1/06H03B17/00H01S3/1303H01S5/0687Y10T29/49016
Inventor 珎道幸治
Owner SEIKO EPSON CORP