Prediction method of exposure energy parameter in photoetching pilot run
A technology of exposure energy and prediction method, which is applied in the semiconductor field, can solve the problems of increasing production costs, insufficient supply, high failure rate of test wafers, etc., and achieves the effect of saving costs and improving the success rate
Active Publication Date: 2014-04-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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[0005] The present invention provides a lithography test operation for defects in the prior art that the small batch of products cannot provide enough data to predict accurate values, and the reworked test wafers have a relatively high failure rate and increase production costs. Prediction method of medium exposure energy parameters
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[0016] In order to illustrate the technical content, structural features, achieved goals and effects of the present invention in detail, the following will be described in detail in conjunction with the embodiments and accompanying drawings.
[0017] see figure 1 , figure 1 Shown is a flow chart of the method for predicting exposure energy parameters in the lithography test run of the present invention. The method for predicting exposure energy parameters in the lithography test run includes: when performing a new test run, the predicted exposure energy parameters refer to the exposure energy of the same process and the same layer structure of the same equipment; When , the predicted exposure energy parameters are calculated based on the exposure energy ratio on each device. Wherein, when the equipment is changed for trial operation, the predicted exposure energy parameters are calculated based on the exposure energy ratio on each equipment, and the calculation method furthe...
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The invention discloses a prediction method of an exposure energy parameter in photoetching pilot run, which comprises the following steps: when in new pilot run, the predicted exposure energy parameter refers to the exposure energy of the same process and same interlayer structure of the same equipment; when the pilot run of the equipment is changed, the predicted exposure energy parameter is calculated based on the exposure energy proportion on each kind of equipment. When the pilot run of the equipment is changed, the calculation method comprises the following steps: (S1) setting out exposure energy matrixes of the equipment and technological condition parameters in the photoetching technology; (S2) performing condition matching, and calculating the exposure energy parameter reference value Dose_Ref(n) based on the exposure energy parameter under the condition; (S3) obtaining the predicted exposure energy parameter Dose_JI based on the weight Wt(n) and time Day(n) of the exposure energy parameter Dose_Ref(n) of a sample in a database. The prediction method of the exposure energy parameter in photoetching pilot run, disclosed by the invention, can remarkably improve the success rate of pilot run while performing exposure energy prediction, thereby saving the cost.
Description
technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for predicting exposure energy parameters in photolithography trial operation. Background technique [0002] At present, Automated Process Control (APC) is widely used in photolithography process control. For example, exposure energy parameters are regulated through automated process control to ensure that key dimensional parameters of the production line meet process requirements. [0003] However, in actual production, certain problems are bound to arise due to the different online volumes of different products. It is mainly attributed to the fact that small batches of products cannot provide enough data to predict accurate values. In particular, in workshops with complex product lines, there will be more trial run problems. It is difficult to predict the exposure energy parameters during the test run, so the test must be passed to calculate the exposure ener...
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IPC IPC(8): G03F7/20
Inventor 陆向宇鲍晔
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP