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Wave filter and manufacture method thereof

A manufacturing method and filter technology, applied in impedance networks, electrical components, multi-terminal pair networks, etc., can solve problems such as excessive variation range and low filter yield, and achieve the effect of improving production yield

Active Publication Date: 2014-04-02
ROFS MICROSYST TIANJIN CO LTD
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  • Abstract
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  • Claims
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Problems solved by technology

[0009] Aiming at the problem in the related art that the range of change of the M value of the filter is too large on the entire wafer to cause the low yield of the filter, the present invention proposes a filter and a manufacturing method thereof, which can reduce the range of change of the M value and improve Filter Manufacturing Yield

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  • Wave filter and manufacture method thereof
  • Wave filter and manufacture method thereof

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Embodiment Construction

[0049] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. All other embodiments obtained by persons of ordinary skill in the art based on the embodiments of the present invention belong to the protection scope of the present invention.

[0050] According to an embodiment of the present invention, there is provided a filter, wherein the filter includes series resonators and parallel resonators, at least one series resonator includes a mass load, and at least one parallel resonator includes a mass load, there are some resonances There is no mass load in the device, and the form and quantity of mass load are not limited in the present invention, and the application methods of mass load known to those skilled in the art are all wi...

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Abstract

The invention discloses a wave filter and a manufacture method thereof. The wave filter comprises series resonators and parallel resonators, where at least one series resonator comprises mass load; at least one parallel resonator comprises mass load; and the material of the mass load of the series resonator is different from that of the mass load of the parallel resonator. As the material of the mass load of the series resonator is different from that of the mass load of the parallel resonator, M values are scarcely influenced by the thickness of a covering layer, therefore, the rangeability of the M values on a whole wafer is controlled, and further the yield rate is improved.

Description

technical field [0001] The present invention relates to the field of semiconductors, and in particular, to a filter and a manufacturing method thereof. Background technique [0002] Wireless broadband communication has always been the focus of attention, but the existing frequency resources are very limited, high-quality frequency bands have been occupied, and new applications are forced to use other noisy and scattered frequency bands. In order to reduce the interference between different operating frequency bands, RF filters that can provide low passband insertion loss, high stopband rejection, steep roll-off, and small passband ripple are widely used in wireless communications. A radio frequency filter can consist of several resonators coupled electrically or in other ways. Film Bulk Acoustic Resonator (FBAR) has high Q value, high operating frequency, high power capacity, strong anti-static discharge (Electro-Static Discharge, ESD) ability, and is mainly used in the man...

Claims

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Application Information

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IPC IPC(8): H03H7/01H03H3/007
Inventor 张浩张孟伦庞慰张代化
Owner ROFS MICROSYST TIANJIN CO LTD
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