Wave filter and manufacture method thereof
Patent Information
- Authority / Receiving Office
- CN · China
- Current Assignee / Owner
- ROFS MICROSYST TIANJIN CO LTD
- Publication Date
- 2014-04-02
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Abstract
Description
technical field
[0001] The present invention relates to the field of semiconductors, and in particular, to a filter and a manufacturing method thereof. Background technique
[0002] Wireless broadband communication has always been the focus of attention, but the existing frequency resources are very limited, high-quality frequency bands have been occupied, and new applications are forced to use other noisy and scattered frequency bands. In order to reduce the interference between different operating frequency bands, RF filters that can provide low passband insertion loss, high stopband rejection, steep roll-off, and small passband ripple are widely used in wireless communications. A radio frequency filter can consist of several resonators coupled electrically or in other ways. Film Bulk Acoustic Resonator (FBAR) has high Q value, high operating frequency, high power capacity, strong anti-static discharge (Electro-Static Discharge, ESD) ability, and is mainly used in the man...