Wave filter and manufacture method thereof

A manufacturing method and filter technology, applied in impedance networks, electrical components, multi-terminal pair networks, etc., can solve problems such as excessive variation range and low filter yield, and achieve the effect of improving production yield

Active Publication Date: 2014-04-02
ROFS MICROSYST TIANJIN CO LTD
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] Aiming at the problem in the related art that the range of change of the M value of the filter is too large on the entire wafer to cause the low yield of the filte

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wave filter and manufacture method thereof
  • Wave filter and manufacture method thereof
  • Wave filter and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0049] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by a person of ordinary skill in the art fall within the protection scope of the present invention.

[0050] According to an embodiment of the present invention, there is provided a filter, wherein the filter includes a series resonator and a parallel resonator, at least one series resonator includes a mass load, and at least one parallel resonator includes a mass load, and there are some resonances. If the device has no mass load, and the present invention does not limit the form and quantity of the mass load, the mass load application methods known to those ski...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention discloses a wave filter and a manufacture method thereof. The wave filter comprises series resonators and parallel resonators, where at least one series resonator comprises mass load; at least one parallel resonator comprises mass load; and the material of the mass load of the series resonator is different from that of the mass load of the parallel resonator. As the material of the mass load of the series resonator is different from that of the mass load of the parallel resonator, M values are scarcely influenced by the thickness of a covering layer, therefore, the rangeability of the M values on a whole wafer is controlled, and further the yield rate is improved.

Description

technical field [0001] The present invention relates to the field of semiconductors, and in particular, to a filter and a manufacturing method thereof. Background technique [0002] Wireless broadband communication has always been the focus of attention, but the existing frequency resources are very limited, high-quality frequency bands have been occupied, and new applications are forced to use other noisy and scattered frequency bands. In order to reduce the interference between different operating frequency bands, RF filters that can provide low passband insertion loss, high stopband rejection, steep roll-off, and small passband ripple are widely used in wireless communications. A radio frequency filter can consist of several resonators coupled electrically or in other ways. Film Bulk Acoustic Resonator (FBAR) has high Q value, high operating frequency, high power capacity, strong anti-static discharge (Electro-Static Discharge, ESD) ability, and is mainly used in the man...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H03H7/01H03H3/007
Inventor 张浩张孟伦庞慰张代化
Owner ROFS MICROSYST TIANJIN CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap