A UWB Low Noise Monolithic Integrated Amplifier

Abstract

The invention discloses an ultra-wide-band low-noise singlechip integrated amplifier. The ultra-wide-band low-noise singlechip integrated amplifier comprises a primary amplifying circuit, a secondary amplifying circuit and a tertiary amplifying circuit, wherein the primary amplifying circuit comprises a first triode transistor; the secondary amplifying circuit comprises a second triode transistor and a third triode transistor; the tertiary amplifying circuit comprises a control current inputting end, a fourth resistor, a first filtering capacitor and a fourth triode transistor; the control current inputting end is connected to a base electrode of the third triode transistor through the fourth resistor; the fourth resistor and the base electrode of the third triode transistor are simultaneously grounded through the first filtering capacitor; an emitting electrode of the third triode transistor is connected to a base electrode of the fourth triode transistor; and a collector electrode of the fourth triode transistor is a signal outputting end of the tertiary amplifying circuit. By using the ultra-wide-band low-noise singlechip integrated amplifier, the service life of a battery is greatly prolonged, the parasitic inductance is greatly reduced, high-frequency gain is increased, and a bandwidth range is broadened.

Description

technical field [0001] The invention relates to an integrated amplifier, in particular to an ultra-wideband low-noise monolithic integrated amplifier. Background technique [0002] In the face of tight wireless communication resources, since the FCC (Federal Communications Commission of the United States) allocated the 3.1GHz-10.6GHz frequency band to ultra-wideband UWB (Ultra-Wide Band) and approved ultra-wideband UWB civilian use, wireless personal area network (WPAN) ), home network connection and short-range radar and other fields have achieved rapid development, and thus have broad market application prospects. [0003] At present, there are two main methods of ultra-wideband communication. One is pulse ultra-wideband, which uses short-time impact pulses as information carriers, and carries information through PPM, PAM, etc. Modulation at the nanosecond level) to obtain very wide bandwidth; the other is multi-band ultra-wideband, which carries information through MB-OF...

AI Technical Summary

Problems solved by technology

However, as the frequency increases and the inductance impedance increases, because the structure uses a bonding wire inductance, the gain is greatly reduced at high frequencies, and the working bandwidth cannot meet the requirements of UWB applications, and the amplifier also works during the data blank period. The service life of the battery is greatly reduced, and the application in the field of mobile communication is also greatly restricted

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