Novel acrylic monomers, polymers and resist compositions comprising the same

A technology of resist and polymer, which is applied in the photoplate making process of patterned surface, photosensitive materials used in optomechanical equipment, instruments, etc., can solve the problem of reducing the thickness of the patterned part and the etching resistance of photoresist To avoid problems such as drop, to achieve the effect of preventing thickness drop, excellent sensitivity and resolution

Active Publication Date: 2016-04-13
SK MATERIALS PERFORMANCE CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this NTD method has the problem that the thickness of the patterned part at the exposed part is reduc

Method used

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  • Novel acrylic monomers, polymers and resist compositions comprising the same
  • Novel acrylic monomers, polymers and resist compositions comprising the same
  • Novel acrylic monomers, polymers and resist compositions comprising the same

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0095] As an example of the compound of the above chemical formula 2, as shown in the following reaction formula 1, it can be prepared by the following preparation method including the following steps: DL-camphor (2b) is combined with chlorosulfonic acid and halogen (such as bromine) The step of preparing brominated camphor (2c) by reacting the mixture of, and the step of reacting the aforementioned brominated camphor (2c) with an oxidizing agent such as potassium persulfate.

[0096] [Reaction formula 1]

[0097]

[0098] In the above reaction formula 1, R 2 And R 3 As defined earlier.

[0099] Specifically, sodium methacrylate and the like can be used as the compound of the aforementioned chemical formula 3.

[0100] Preferably, 1.1 to 1.3 moles of the compound of Chemical Formula 3 are used relative to 1 mole of the compound of Chemical Formula 2, and a simple product can be obtained without performing other processes.

[0101] The reaction of the compound of the above chemical form...

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Abstract

The present invention provides a method for forming a pattern by photolithography, especially by NPD, to prevent the decrease in thickness and the decrease in the etch resistance of the resist caused by it, so that it is useful for forming a fine resist with excellent sensitivity and resolution. The acrylic monomer of Chemical Formula 1 of the resist pattern, a resist polymer including a repeating unit derived from the above acrylic monomer, and a resist composition including the polymer. [Chemical formula 1] In the above formula, each substituent is as defined in the specification.

Description

technical field [0001] The present invention relates to a novel acrylic monomer, a polymer, and a resist composition containing the polymer, which are useful for patterning by photolithography. Background technique [0002] Recently, in lithography technology, high volume manufacturing (HVM) using ArF immersion exposure technology (immersion) is being actively carried out, and technology development for realizing a line width below 50 nm is mainly carried out. In particular, research on negative-tone development (NTD) is being actively conducted as a method for realizing a contact hole pattern with a line width of 30 nm. [0003] The NTD method is different from the conventional positive-tone development (PTD) method in that an organic solvent is used as a developer solution. That is, unlike the existing PTD method in which acid is generated at the exposed part to deprotect the acid-labile group and rinsed with a tetramethylammonium hydroxide (TMAH) developer solution, the ...

Claims

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Application Information

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IPC IPC(8): C07D311/94C08F220/28C08F232/08G03F7/004G03F7/00
CPCC07D311/94C08F220/28C08F220/282G03F7/004G03F7/202C08F232/08C08F220/281C07D493/08C08F20/10C08F20/18G03F7/027
Inventor 韩俊熙徐东辙安浩益金镇伯赵英旭申汉杰
Owner SK MATERIALS PERFORMANCE CO LTD
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