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Laser direct writing exposure device based on laser emission loss

A technology of stimulated emission of light and laser direct writing, which is applied in the field of optical exposure, can solve the problems of enhancing resolution, not exceeding the Abbe diffraction limit, and not considering

Active Publication Date: 2016-06-08
BEIJING GUOWANG OPTICAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Most importantly, there is an unavoidable problem with the above-mentioned technologies: any imaging system cannot exceed the Abbe diffraction limit
However, this method has high requirements for the film to be produced, and it is very difficult to precisely control the photoresist in the process.
In addition, in the above-mentioned technologies, how to enhance the resolution while improving the depth of focus has not been considered, but in the optical exposure etching technology, two factors need to be considered at the same time

Method used

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  • Laser direct writing exposure device based on laser emission loss
  • Laser direct writing exposure device based on laser emission loss
  • Laser direct writing exposure device based on laser emission loss

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specific Embodiment

[0076] In this specific embodiment, the numerical aperture NA of the high numerical aperture achromatic objective lens 401 is selected as NA=0.95; the phase adjustment parameter σ of the phase zone plate 301 is 30 -5 ,F=12; relative beam size δ 0 =1.2; the radius ratio of the amplitude zone plate 302 η=0.92, η is the ratio of the radius of the central light-transmitting area of ​​the amplitude zone plate to the radius of the outer circle; the absorption factor ξ=100. The obtained light field on the focal plane is shown in Figure 3, where Figure 3a It is the light field distribution formed by the excitation light source on the focal plane. The coordinate axis in the figure is in units of wavelength. Said Figure 3b It is the light field distribution of the de-excited light on the focal plane, and the center position of the field of the de-excited light on the focal plane is a dark field. Therefore, the ring-shaped area of ​​the photoresist irradiated by the de-excitation light c...

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Abstract

The invention discloses a laser direct writing exposure device based on stimulated light emission loss. The laser direct writing exposure device is characterized by comprising an excitation light source, a de-excitation light source, a first space light modulator, a second space light modulator, a half wave plate group, a dichroscope, a phase position type wave zone plate, an amplitude type wave zone plate, a high numerical value aperture achromatic objective and a three-dimension scanning platform. The laser direct writing exposure device provided by the invention can realize the optical exposure of high resolution and long focus depth.

Description

Technical field [0001] The invention belongs to the field of optical exposure, in particular to a laser direct writing exposure device based on laser emission loss. Background technique [0002] With the continuous improvement of VLSI integration, projection lithography, which is a key technology of integrated circuit manufacturing, has also developed rapidly. Continuously improving the resolution and focal depth of the projection lithography system has always been the focus of scientific research. Optical exposure technology is mainly based on shortening the exposure wavelength of the lithography machine and increasing the numerical aperture of the lithography objective lens as an effective means to improve the resolution of the lithography machine, but at the same time, it will sharply reduce the focal depth of the projection objective lens. At present, the international mainstream deep ultraviolet lithography (DUVL) technology uses off-axis illumination to overcome the above ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20
Inventor 朱菁黄惠杰杨宝喜宋强张方王健陈明李璟
Owner BEIJING GUOWANG OPTICAL TECH CO LTD