A kind of composite structure and manufacturing method based on ce:yag chip

一种复合结构、制作方法的技术，应用在光学领域，能够解决效用降低、波长单一等问题，达到成本低、时间特性好、显色效果好的效果
CN103805196BActive Publication Date: 2016-09-28KUSN KAIWEI ELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
KUSN KAIWEI ELECTRONICS
Publication Date
2016-09-28

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Abstract

The invention discloses a composite structure based on a Ce:YAG wafer, comprising a Ce:YAG wafer and a red light-emitting layer fixed on the Ce:YAG wafer, and also discloses the composition of the composite structure based on a Ce:YAG wafer The manufacturing method forms a compound optical structure capable of realizing wide-band light emission from green light to red light, and has wide applications in the fields of detection equipment and lighting devices.
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Description

technical field

[0001] The invention relates to the field of optics, in particular to a composite structure and a manufacturing method based on a Ce:YAG wafer. Background technique

[0002] Yttrium aluminum garnet doped with cerium ions (Ce:Y 3 Al 5 o 12 Or Ce:YAG) crystal is a new type of inorganic scintillation crystal that appeared in the 1980s. Due to its advantages such as high light output and fast time decay constant, it is widely used in high energy physics, nuclear physics, imaging nuclear medicine, industrial online detection and lighting, etc. The field has broad application prospects. In addition to relatively high light output (20000Ph / MeV) and fast time decay (88ns / 300ns), Ce:YAG scintillation crystals also have a good ability to distinguish γ-rays and α-particles from light pulses. The 550nm fluorescence that is effectively coupled by the photodiode can be excited by the blue light in the 435nm-470nm band and synthesize white light with it, and has excelle...

Claims

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